Integrated circuit and method of manufacturing same

ABSTRACT

A Schmitt trigger circuit includes a first and second set of transistors, a first and second feedback transistor, and a first and second circuit. The first set of transistors is connected between a first voltage supply and an output node. The first voltage supply has a first voltage. The second set of transistors is connected between the output node and a second voltage supply. The second voltage supply has a second voltage. The first feedback transistor is connected to the output node, a first node and a second node. The second feedback transistor is connected to the output node, a third node and a fourth node. The first circuit is coupled to and configured to supply the second supply voltage to the second node. The second circuit is coupled to and configured to supply the first supply voltage to the fourth node.

BACKGROUND

The semiconductor integrated circuit (IC) industry produces a widevariety of analog and digital devices to address issues in a number ofdifferent areas. As ICs have become smaller and more complex, operatingvoltages of these analog and digital devices are reduced, affecting theoperating voltages of these digital devices and overall IC performance.Furthermore, ICs with reduced operating voltages are susceptible toelectrostatic discharge (ESD). ESD causes harmful effects to solid stateelectronic components, such as integrated circuits if not taken intoaccount.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a block diagram of an IC, in accordance with some embodiments.

FIG. 2A is a circuit diagram of a Schmitt trigger circuit, in accordancewith some embodiments.

FIGS. 2B-2D are diagrams of an IC, in accordance with some embodiments.

FIG. 3A is a circuit diagram of a Schmitt trigger circuit, in accordancewith some embodiments.

FIGS. 3B-3D are diagrams of an IC, in accordance with some embodiments.

FIG. 4A is a circuit diagram of a Schmitt trigger circuit, in accordancewith some embodiments.

FIGS. 4B-4D are diagrams of an IC, in accordance with some embodiments.

FIG. 5A is a functional flow chart of a method of manufacturing an ICdevice, in accordance with some embodiments.

FIG. 5B is a flowchart of a method of operating an IC in accordance withsome embodiments.

FIG. 6 is a flowchart of a method of forming or manufacturing anintegrated circuit in accordance with some embodiments.

FIG. 7 is a flowchart of a method of generating a layout design of anintegrated circuit, in accordance with some embodiments.

FIG. 8 is a schematic view of a system for designing an IC layout designand manufacturing an IC circuit, in accordance with some embodiments.

FIG. 9 is a block diagram of an IC manufacturing system, and an ICmanufacturing flow associated therewith, in accordance with at least oneembodiment of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides different embodiments, or examples,for implementing features of the provided subject matter. Specificexamples of components, materials, values, steps, arrangements, or thelike, are described below to simplify the present disclosure. These are,of course, merely examples and are not limiting. Other components,materials, values, steps, arrangements, or the like, are contemplated.For example, the formation of a first feature over, or on a secondfeature in the description that follows may include embodiments in whichthe first and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formed betweenthe first and second features, such that the first and second featuresmay not be in direct contact. In addition, the present disclosure mayrepeat reference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In accordance with some embodiments, an integrated circuit includes aSchmitt trigger circuit coupled in parallel with an ESD circuit. In someembodiments, the Schmitt trigger circuit includes a first set oftransistors and a second set of transistors. The first set oftransistors is connected between a first voltage supply and an outputnode. The first voltage supply has a first voltage. The second set oftransistors is connected between the output node and a second voltagesupply. In some embodiments, the second voltage supply has a secondvoltage different from the first voltage.

In some embodiments, the Schmitt trigger circuit further includes afirst feedback transistor and a second feedback transistor. The firstfeedback transistor is connected to the output node, a first nodebetween the first set of transistors, and a second node. The secondfeedback transistor is connected to the output node, a third nodebetween the second set of transistors, and a fourth node.

In some embodiments, the Schmitt trigger circuit further includes afirst circuit electrically connected to the second node, the firstvoltage supply and the second voltage supply. In some embodiments, thefirst circuit is configured to supply the second supply voltage to thesecond node.

In some embodiments, the Schmitt trigger circuit further includes asecond circuit electrically connected to the fourth node, the firstvoltage supply and the second voltage supply. In some embodiments, thesecond circuit is configured to supply the first supply voltage to thefourth node.

In some embodiments, by incorporating the first and second circuit inthe integrated circuit one or more parasitic transistors within theintegrated circuit are not turned on during an ESD event at the firstvoltage supply or the second voltage supply, thereby resulting inimproved ESD performance compared to other approaches.

FIG. 1 is a block diagram of an IC 100, in accordance with someembodiments.

IC 100 includes a gate grounded n-type metal oxide semiconductor(GGNMOS) transistor 102 connected between a voltage supply 112 (e.g.,VDD) and a reference voltage supply 114 (e.g., VSS). A gate 116 ofGGNMOS transistor 102 is coupled to a reference voltage supply 114(e.g., VSS).

A drain 118 of GGNMOS transistor 102 is coupled to voltage supply 112. Asource 122 of GGNMOS transistor 102 is coupled to voltage supply 114,gate 116, and a body 124 or bulk of GGNMOS transistor 102. The body 124or bulk of GGNMOS transistor 102 is further coupled to reference voltagesupply 114. GGNMOS transistor 102 further includes a body diode 120connected between voltage supply 112 (e.g., VDD) and reference voltagesupply 114 (e.g., VSS), and is connected across the drain 118 and thesource 122 of GGNMOS transistor 102. In some embodiments, during an ESDevent at the reference voltage supply 114, the body diode is configuredto provide an additional ESD discharge path (e.g., in addition to thepath between the drain/source of GGNMOS transistor 102) between thereference voltage supply 114 (e.g., VSS) and the voltage supply 112(e.g., VDD).

Other numbers of circuits, or circuit types for GGNMOS transistor 102are within the scope of the present disclosure. For example, in someembodiments, GGNMOS transistor 102 is a diode, a gate grounded p-typemetal oxide semiconductor (GGPMOS) transistor or other suitablestructures are within the contemplated scope of the disclosure.

IC 100 further includes a semiconductor device 104. GGNMOS transistor102 is connected in parallel with semiconductor device 104.

Semiconductor device 104 includes a Schmitt trigger circuit 106 abuttedon one or more sides by one or more of circuits 110A, 110B, and 110C(hereinafter circuit 110).

Schmitt trigger circuit 106 includes a circuit 108. Schmitt triggercircuit 106 is configured to generate an output signal (not shown) inresponse to an input signal (not shown). In some embodiments, the inputsignal includes noisy components, and the Schmitt trigger circuit 106 isconfigured to remove the noisy components of the input signal ingenerating the output signal.

By incorporating circuit 108 in Schmitt trigger circuit 106, one or moreparasitic PNP or NPN transistors that are part of Schmitt triggercircuit 106 and circuit 110 are not turned on during an ESD event atvoltage supply 112 or reference voltage supply 114, thereby resulting inbetter ESD performance than other approaches. For example, in someembodiments, the one or more parasitic PNP or NPN transistors withinSchmitt trigger circuit 106 have a larger breakdown voltage than otherapproaches, thereby causing the GGNMOS transistor 102 to turn on priorto the breakdown voltage of the Schmitt trigger circuit 106 beingreached, and thus resulting in improved ESD performance than otherapproaches. In some embodiments, an internal voltage or virtual voltage(e.g., VDD or VSS) delivered by circuit 108 to one or more nodes (e.g.,node NET2 or NET3 in FIG. 2A and shown below) in the Schmitt triggercircuit 106 thereby causes the one or more parasitic PNP or NPNtransistors to not turn on in response to an ESD event. In someembodiments, the one or more nodes in the Schmitt trigger circuit 106are coupled to voltage supply 112 or reference voltage supply 114 bycircuit 108, and thus the one or more nodes in the Schmitt triggercircuit 106 are not directly coupled to voltage supply 112 or referencevoltage supply 114 thus causing the one or more parasitic PNP or NPNtransistors to turn off or remain turned off.

Circuit 110 includes one or more electronic components, such asresistors, transistors, capacitors, inductors and diodes, or othercomponents or devices within the scope of the present disclosure. Insome embodiments, circuit 110 includes logic circuits, and/or memorycircuits, and/or the like. In some embodiments, circuit 110 includesmicroprocessors, field-programmable gate arrays (FPGAs), memories (e.g.,RAM, ROM, and flash) and application-specific integrated circuit(ASICs). In some embodiments, circuit 110 includes op-amps, linearregulators, phase locked loops, oscillators and active filters. Othercircuits or devices for circuit 110 are within the scope of the presentdisclosure.

FIG. 2A is a circuit diagram of a Schmitt trigger circuit 200A, inaccordance with some embodiments.

Schmitt trigger circuit 200A is an embodiment of Schmitt trigger circuit106 in IC 100, and similar detailed description is therefore omitted.

Schmitt trigger circuit 200A is configured to filter noise present in aninput signal IN at input node 228. The output signal OUT of Schmitttrigger circuit 200A has two possible states: high or low. The outputsignal (not shown) at output node 206 depends upon the input signal andchanges once the input signal crosses one or more pre-definedthresholds.

Schmitt trigger circuit 200A includes a set of PMOS transistors 202. Theset of PMOS transistors 202 are connected between a first voltage supply204 and an output node 206. The first voltage supply 204 has a firstsupply voltage (e.g., VDD).

Schmitt trigger circuit 200A further includes a set of NMOS transistors208 that are connected between output node 206 and a second voltagesupply 210. In some embodiments, second voltage supply 210 is differentfrom first voltage supply 204. Second voltage supply 210 has a secondsupply voltage (e.g., VSS) different from the first supply voltage(e.g., VDD).

Schmitt trigger circuit 200A further includes a feedback PMOS transistor212 connected to output node 206 and between a node 214 and a node 216.Node 214 is between the transistors in the set of PMOS transistors 202.

Feedback PMOS transistor 212 will turn on/off in response to at leastthe voltage at output node 206 (e.g., output signal OUT). In someembodiments, feedback PMOS transistor 212 will turn on in response tothe voltage at output node 206 (e.g., output signal OUT), and feedbackPMOS transistor 212 will pass a voltage (e.g., second supply voltageVSS−Vth of transistor MP0) from node 216 to node 214. In someembodiments, the voltage at node 214 is a feedback signal from feedbackPMOS transistor 212.

Schmitt trigger circuit 200A further includes a circuit 218 electricallyconnected to node 216, first voltage supply 204 and second voltagesupply 210. Circuit 218 is configured to supply the second supplyvoltage VSS to node 216. By including circuit 218 in Schmitt triggercircuit 200A, circuit 218 is configured to cause a drain or source inthe feedback transistor 212 to not be directly connected to secondsupply voltage VSS, which reduces the possibility one or more parasiticNPN transistors in Schmitt trigger circuit 200A or adjacent circuitsfrom turning on, thereby improving ESD performance in comparison withother approaches. In some embodiments, an element is adjacent to anotherelement if the elements are directly next to each other.

Schmitt trigger circuit 200A further includes a feedback NMOS transistor220 connected to output node 206, a node 222 and a node 224. Node 222 isbetween transistors in the set of NMOS transistors 208.

Feedback NMOS transistor 220 will turn on/off in response to at leastthe voltage at output node 206 (e.g., output signal OUT). In someembodiments, feedback NMOS transistor 220 will turn on in response tothe voltage at output node 206 (e.g., output signal OUT), and feedbackNMOS transistor 220 will pass a voltage (e.g., first supply voltageVDD−Vth of transistor MN0) from node 224 to node 222. In someembodiments, the voltage at node 222 is a feedback signal from feedbackNMOS transistor 220.

Schmitt trigger circuit 200A further includes a circuit 226 electricallyconnected to node 224, first voltage supply 204 and second voltagesupply 210. Circuit 226 is configured to supply the first supply voltageVDD to node 224. By including circuit 226 in Schmitt trigger circuit200A, circuit 226 is configured to cause a drain or source in thefeedback transistor 220 to not be directly connected to first supplyvoltage VDD, which reduces the possibility one or more parasitic NPNtransistors in Schmitt trigger circuit 200A or adjacent circuits fromturning on, thereby improving ESD performance in comparison with otherapproaches.

The set of PMOS transistors 202 includes transistors MP1 and MP2. Theset of NMOS transistors 208 includes transistors MN1 and MN2. Thefeedback NMOS transistor 220 includes transistor MN0. The feedback PMOStransistor 212 includes transistor MP0. The circuit 218 includestransistor MN3. The circuit 226 includes transistor MP3. Each oftransistors MN0, MN1, MN2, and MN3 is an NMOS transistor. In someembodiments, each of transistors MP0, MP1, MP2, and MP3 is a PMOStransistor.

In some embodiments, one or more of transistors MN0, MN1, MN2, or MN3 isa PMOS transistor. In some embodiments, one or more of transistors MP0,MP1, MP2, or MP3 is an NMOS transistor.

Each gate terminal of transistors MP1, MP2, MN1 and MN2 are coupledtogether. The gate terminals of transistors MP1, MP2, MN1 and MN2 areconfigured to receive an input signal from an input node 228. In someembodiments, transistors MP1, MP2, MN1 and MN2 are configured to invertthe input signal. A source terminal of transistor MP2 is coupled to thevoltage supply 204.

Each of a drain terminal of transistor MP2, a source terminal oftransistor MP1 and a drain/source terminal of transistor MP0 are coupledtogether. In operation, the drain/source terminal of transistor MP0 isconfigured to supply a first feedback signal to the source terminal oftransistor MP1 or node 214 in response to the output signal at theoutput node 206 and a gate terminal of MP0. In some embodiments, thedrain terminal of transistor MP2 is configured to supply voltage VDD tothe source terminal of transistor MP1. In some embodiments, the drainterminal of transistor MP2 in combination with the drain/source terminalof transistor MP0 is configured to set a voltage at the source terminalof transistor MP1.

Each of a drain terminal of transistor MP1, a drain terminal oftransistor MN1, gate terminals of transistors MP0 and MN0, and an outputnode are coupled together.

An output from the drain terminals of transistors MP1 and MN1 is theoutput signal of Schmitt trigger circuit 200A. In some embodiments,whether MP1 or MN1 is supplying the output signal depends on the inputsignal. In some embodiments, the output signals of transistors MP1 andMN1 determines whether feedback transistors MP0 or MP1 will turn-on orconduct.

Each of a source terminal of transistor MN1, a drain terminal oftransistor MN2 and a drain/source terminal of transistor MN0 are coupledtogether.

In operation, the drain/source terminal of MN0 is configured to supply asecond feedback signal to the source terminal of transistor MN1 and node222 in response to the output signal at the output node 206 and the gateterminal of MN0. In some embodiments, the drain terminal of transistorMN2 is configured to supply a voltage VSS at the source terminal oftransistor MN1. In some embodiments, the drain terminal of transistorMN2 in combination with the drain/source terminal of transistor MN0 isconfigured to set a voltage at the source terminal of transistor MP1.

A source terminal of transistor MN2 is coupled to the voltage supply210.

A gate terminal of transistor MN3 is coupled to voltage supply 204. Asource terminal of transistor MN3 is coupled to voltage supply 210. Adrain terminal of transistor MN3 is coupled to the source/drain terminalof transistor MP0 by node 216. Transistor MN3 is configured to supplythe source/drain terminal of transistor MP0 or node 216 with referencevoltage VSS.

A gate terminal of transistor MP3 is coupled to voltage supply 210. Asource terminal of transistor MP3 is coupled to voltage supply 204. Adrain terminal of transistor MP3 is coupled to the source/drain terminalof transistor MN0 by node 224. Transistor MP3 is configured to supplythe source/drain terminal of transistor MN0 or by node 224 with voltageVDD.

Each of a body or bulk of transistors MP0, MP1, MP2, and MP3 is coupledto voltage supply 204. Further, each of a body of transistors MN0, MN1,MN2, and MN3 are coupled to voltage supply 210.

Transistor MN3 is electrically connected to node 216, first voltagesupply 204 and second voltage supply 210. By at least having the gateterminal of transistor MN3 coupled to first voltage supply 204,transistor MN3 is turned on, is referred to as an “ON” transistor, andtherefore is configured to supply the second supply voltage VSS to node216 and the source/drain terminal of transistor MP0. By includingtransistor MN3 in Schmitt trigger circuit 200A, transistor MN3 isconfigured to cause the source/drain terminal of transistor MP0 to notbe directly connected to second supply voltage VSS, which reduces thepossibility one or more parasitic PNP transistors in Schmitt triggercircuit 200A or adjacent circuits from turning on, thereby improving ESDperformance.

Transistor MP3 is electrically connected to node 224, first voltagesupply 204 and second voltage supply 210. By at least having the gateterminal of transistor MP3 coupled to second voltage supply 210,transistor MP3 is turned on, is referred to as an “ON” transistor, andtherefore is configured to supply the first supply voltage VDD to node224 and the source/drain terminal of transistor MN0. By includingtransistor MP3 in Schmitt trigger circuit 200A, transistor MP3 isconfigured to cause the source/drain terminal of transistor MN0 to notbe directly connected to first supply voltage VDD, which reduces thepossibility one or more parasitic NPN transistors in Schmitt triggercircuit 200A or adjacent circuits from turning on, thereby improving ESDperformance.

Other configurations, number of transistors or transistor types forSchmitt trigger circuit 200A are within the scope of the presentdisclosure.

FIGS. 2B-2D are diagrams of an IC 200B, in accordance with someembodiments.

FIG. 2B is top-level view of IC 200B, in accordance with someembodiments.

FIG. 2C is a cross-sectional view of IC 200B as intersected by planeA-A′, in accordance with some embodiments.

FIG. 2D is a cross-sectional view of IC 200B as intersected by planeB-B′, in accordance with some embodiments.

IC 200B is an embodiment of Schmitt trigger circuit 200A of FIG. 2A, andsimilar detailed description is therefore omitted.

IC 200B is manufactured based on a corresponding layout design similarto IC 200B. For brevity, FIGS. 2B-2D are described as a corresponding IC200B, but in some embodiments FIGS. 2B-2D further correspond to layoutdesigns having features similar to IC 200B, and structural elements ofIC 200B further correspond to layout patterns, and structuralrelationships including alignment, lengths and widths, as well asconfigurations and layers of a corresponding layout design of IC 200Bare similar to the structural relationships and configurations andlayers of IC 200B, and similar detailed description will not bedescribed for brevity.

For purposes of brevity and succinctness, common reference numerals andelements to the FIGS. 2A, 2B, 2C, and 2D retain the same number.Further, discussion on these elements is not presented again to avoidrepetition. Differences between the figures are called out withseparate, new reference numerals, and discussion of the differences.Furthermore, similar elements from FIG. 2A correspond to elements inFIGS. 2B-2D with an “A” after the similar reference numeral. Forexample, the set of PMOS transistors 202 in FIG. 2A correspond to theset of PMOS transistors 202 in FIGS. 2B-2D, and circuit 218 in FIG. 2Acorresponds to circuit 218A in FIGS. 2B-2D.

IC 200B includes a substrate 232. The substrate 232 includes a well 230.Well 230 extends in a first direction (e.g., X-axis), and is insubstrate 232. Well 230 has a first dopant type. The first dopant typeis an N-type dopant. In some embodiments, the n-type dopants includephosphorus, arsenic or other suitable n-type dopants. In someembodiments, well 230 comprises p-type dopants. In some embodiments, thep-dopants include boron, aluminum or other suitable p-type dopants. Thesubstrate 232 has a dopant type opposite of the dopant type of the well230. The substrate 232 has the second dopant type. In some embodiments,the substrate 232 has the first dopant type.

Substrate 232 further includes a set of active regions 236 and activeregion 238A.

The set of active regions 236 (including active regions 236A and 236B)is positioned outside of well 230A. The set of active regions 236 extendin a first direction X, are on a first level 201 (FIGS. 2C, 2D), and isseparated from set of active regions 234 in a second direction (e.g.,Y-axis) different from the first direction. In some embodiments, thefirst level is the active region of IC 200B. The set of active regions236 have a dopant type opposite of the dopant type of at least thesubstrate 232 or the set of active regions 234. The set of activeregions 236 have the first dopant type. In some embodiments, the set ofactive regions 236 have the second dopant type.

Active region 238A is in substrate 232. The active region 238A is nextto the set of active regions 236. Active region 238A has the same dopanttype as the dopant types of the set of active regions 236.

Well 230 includes a set of active regions 234 and active region 240A.

The set of active regions 234 (including active regions 234A, 234B)extend in the first direction and are on a first level 201 (FIGS. 2C,2D), and is in well 230A. The set of active regions 234 have a dopanttype opposite of the dopant type of the well 230. The set of activeregions 234 have the second dopant type. In some embodiments, the set ofactive regions 234 have the first dopant type.

Active region 240A is in well 230A. Active region 240A is next to theset of active regions 234. Active region 240A has the same dopant typeas the dopant types of the set of active regions 234.

IC 200B further include a set of transistors 202A and feedbacktransistor 212A. Set of active regions 234 corresponds to the activeregions of the set of transistors 202A and feedback transistor 212A. Theset of transistors 202A includes transistors MP2 and MP1.

IC 200B further includes a set of transistors 208A and feedbacktransistor 220A. Set of active regions 236 corresponds to the activeregions of the set of transistors 208A and feedback transistor 220A. Theset of transistors 208A includes transistors MN2 and MN1.

IC 200B further includes a circuit 226A. Circuit 226A is configured tosupply voltage VDD to at least one transistor in set of transistors 208Aor feedback transistor 220A. Active region 240A corresponds to theactive regions of circuit 226A.

IC 200B further includes a circuit 218A. Circuit 218A is configured tosupply voltage VSS to at least one transistor in set of transistors 202Aor feedback transistor 212A. Active region 238A corresponds to theactive regions of circuit 218A.

IC 200B further includes a power rail 242 configured to supply thevoltage VDD to at least circuit 226A. In some embodiments, power rail242 is further configured to supply the voltage VDD to at least atransistor within set of transistors 202A. For example, power rail 242is configured to supply voltage VDD to transistor MP2 within the set oftransistors 202A. Power rail 242 is electrically connected to at leastcircuit 226A. Power rail 242 extends in the first direction X, and is ona second level of IC 200B that is different from first level 201. Insome embodiments, the second level is a metal-0 (M0) layer of IC 200B.In some embodiments, the second level is a metal-1 (M1) layer of IC200B. Other metallization layers are within the scope of the presentdisclosure.

IC 200B further includes a power rail 244 configured to supply thevoltage VSS to at least circuit 218A. In some embodiments, power rail244 is further configured to supply the voltage VSS to at least atransistor in set of transistors 208A. For example, power rail 244 isconfigured to supply voltage VSS to transistor MN2 within the set oftransistors 208A. Power rail 244 is electrically connected to at leastcircuit 218A. Power rail 208A extends in the first direction X, and ison the second level.

Well 230 is biased at voltage VDD by body/bulk 234C. Well 230 includesactive regions 234A, 234B and 240A. Active regions 234A and 240A areconfigured to receive voltage VDD from power rail 242. Active region234B is indirectly coupled to power rail 244 by transistor MN3. Thus,active region 234B is not directly coupled to power rail 244 therebyreducing the possibility of parasitic PNP transistors in well 230 andabutting circuits from turning on.

Substrate 230A is biased at voltage VSS by body/bulk 236C. Substrate230A includes active regions 236A, 236B and 238A. Active regions 236Aand 238A are configured to receive voltage VSS from power rail 244.Active region 236B is indirectly coupled to power rail 242 by transistorMP3. Thus, active region 236B is not directly coupled to power rail 242thereby reducing the possibility of parasitic NPN transistors insubstrate 230A and abutting circuits from turning on.

In some embodiments, reduction of PNP and/or NPN parasitic transistorsturning on, increases the breakdown voltage of IC 200B resulting inimproved ESD performance than other approaches.

Feedback transistor 212A includes transistor MP0. Feedback transistor220A includes transistor MN0.

Transistors MP0 and MN0 include a gate 264A extending in the seconddirection, and being on a third level 203 different from first level andthe second level. In some embodiments, the third level is the POLY levelor the metal over diffusion (MD) level of IC 200B. In some embodiments,the gate 264A is divided into multiple portions that are connectedtogether by other structures.

A source/drain (S/D) region 284A of transistor MP0 is a first portion ofactive region 234B of first set of active regions 234. An S/D region284B of transistor MP0 is a second portion of active region 234B offirst set of active regions 234.

An S/D region 266A of transistor MN0 is a first portion of active region236B of second set of active regions 236. An S/D region 266B oftransistor MN0 is a second portion of active region 236B of second setof active regions 236.

Circuit 226A includes transistor MP3. Circuit 218A includes transistorMN3.

Transistor MN3 is an NMOS transistor including a gate 246A. Gate 246A isseparated from gate 246B by removed gate portion 246C. Gate 246A extendsin the second direction, and is on the third level 203. S/D 270 oftransistor MN3 and S/D region 272 of transistor MN3 are within activeregion 238A.

Transistor MP3 is a PMOS transistor including gate 246B, a S/D 248A, anda S/D 248B. Gate 246B extends in the second direction, and is on thethird level 203. S/D 248A and S/D 248B are within active region 240A.

IC 200B further includes vias 252, via 274, via 276, and conductivestructures 253, 254, 258, 260 and 278.

Vias 252 includes one or more of vias 252A1-252A5 or vias 252B1-252B5.Vias 252 includes other vias shown in FIG. 2B that are not labelled, butare similar to vias 252A1-252A5 or vias 252B1-252B5, and similardetailed description is omitted. Vias 252 are in a via layer 205, andare connected to a conductor layer 207.

Conductive structures 253 include one or more conductive structureslabelled with NET0, NET1, OUT and IN, and are not described for brevity,but are similar to conductive structures 254, 258, 260 and 278, andsimilar detailed description is omitted. Conductive structures 253, 254,258, 260 and 278 are within conductor layer 207. In some embodiments,conductor layer 207 is on the second level of IC 200B.

Conductive structure 258 is coupled to the power rail 242. Conductivestructure 258 is connected to gate 246A of transistor MN3 by via 274.Conductive structure 258 is further connected to S/D 248A of transistorMP3 by via 252A2. Conductive structure 258 is configured to supply gate246A and S/D 248A with voltage VDD.

Conductive structure 254 is coupled to the power rail 244. Conductivestructure 254 is connected to gate 246B of transistor MP3 by via 276.Conductive structure 254 is further connected to S/D 270 of transistorMN3 by via 252A4. Conductive structure 254 is configured to supply gate246B and S/D 270 with voltage VSS.

Conductive structure 260 connects S/D region 248B of transistor MP3 andS/D region 266A of transistor MN0 together. Conductive structure 260 isconnected to S/D region 248B of transistor MP3 by via 252B2. Conductivestructure 260 is connected to S/D region 266A of transistor MN0 by via252A3.

Conductive structure 278 connects S/D region 248B of transistor MN3 andS/D region 266A of transistor MP0 together. Conductive structure 278 isconnected to S/D region 272 of transistor MN3 by via 252B4. Conductivestructure 278 is connected to S/D region 284A of transistor MP0 by via252A1.

Body/bulk 234C is connected to voltage supply 204 by via 252A5 andconductive structure 299. Conductive structure 299 is configured tosupply voltage VDD to the body/bulk 234C and the body or bulk of otherPMOS transistors in IC 200B. In some embodiments, conductive structure299 is coupled to power rail 242.

Body/bulk 236C is connected to voltage supply 206 by via 252B5 andconductive structure 297. Conductive structure 297 is configured tosupply voltage VSS to the body/bulk 236C and the body or bulk of otherNMOS transistors in IC 200B. In some embodiments, conductive structure297 is coupled to power rail 242.

In some embodiments, at least one power rail of power rails 242, 244, atleast one via of vias vias 252, via 274, via 276, at least oneconductive structure of conductive structures 253, 254, 258, 260 and 278includes one or more layers of a conductive material, a metal, a metalcompound or a doped semiconductor. In some embodiments, the conductivematerial includes Tungsten, Cobalt, Ruthenium, Copper, or the like orcombinations thereof. In some embodiments, a metal includes at least Cu(Copper), Co, W, Ru, Al, or the like. In some embodiments, a metalcompound includes at least AlCu, W—TiN, TiSix, NiSix, TiN, TaN, or thelike. In some embodiments, a doped semiconductor includes at least dopedsilicon, or the like.

Transistors MP3 and MN3 are configured to supply a corresponding voltageVDD and VSS to corresponding feedback transistors 220A and 212A. In someembodiments, by configuring transistor MP3 to supply voltage VDD tofeedback transistor 220A, and by configuring transistor MN3 to supplyvoltage VSS to feedback transistor 212A, active regions 236B and 234B ofcorresponding feedback transistors 220A and 212A are not directlycoupled to voltage supplies 204 and 206, thereby causing one or moreparasitic PNP or NPN transistors that are part of or next to IC 200B toturn off or remain off during an ESD event at voltage supplies 204 and206, thereby resulting in IC 200B to have a larger breakdown voltage andbetter ESD performance than other approaches.

FIG. 3A is a circuit diagram of a Schmitt trigger circuit 300A, inaccordance with some embodiments.

Schmitt trigger circuit 300A is an embodiment of Schmitt trigger circuit106 in IC 100, and similar detailed description is therefore omitted.

Schmitt trigger circuit 300A is a variation of Schmitt trigger circuit200A of FIG. 2A, and similar detailed description is therefore omitted.For example, in comparison with Schmitt trigger circuit 200A of FIG. 2A,a circuit 318 of Schmitt trigger circuit 300A replaces circuit 218 ofFIG. 2A, and a circuit 326 of Schmitt trigger circuit 300A replacescircuit 226 of FIG. 2A, node 316 replaces node 216, and node 324replaces node 224, and similar detailed description is thereforeomitted.

Schmitt trigger circuit 300A includes set of PMOS transistors 202, setof NMOS transistors 208, feedback PMOS transistor 212, feedback PMOStransistor 220, and circuits 318 and 326.

Circuit 318 is electrically connected to node 316, first voltage supply204, second voltage supply 210 and transistor MP0 of feedback transistor212. Circuit 318 is configured to supply the second supply voltage VSSto node 316 and the drain/source terminal of transistor MP0. Byincluding circuit 318 in Schmitt trigger circuit 300A, circuit 318 isconfigured to cause a drain or source in the feedback transistor 212 tonot be directly connected to second supply voltage VSS, which reducesthe possibility one or more parasitic NPN transistors in Schmitt triggercircuit 300A or adjacent circuits from turning on, thereby improving ESDperformance.

Circuit 326 is electrically connected to node 324, first voltage supply204 and second voltage supply 210, transistor MN0 of feedback transistor220. Circuit 326 is configured to supply the first supply voltage VDD tonode 324 and the drain/source terminal of transistor MN0. By includingcircuit 326 in Schmitt trigger circuit 300A, circuit 326 is configuredto cause a drain or source in the feedback transistor 220 to not bedirectly connected to first supply voltage VDD, which reduces thepossibility one or more parasitic NPN transistors in Schmitt triggercircuit 300A or adjacent circuits from turning on, thereby improving ESDperformance.

Circuit 318 includes transistors MNA0, MNA1 and MPA0 coupled to eachother. Circuit 326 includes transistors MPB0, MPB1 and MNB0 coupled toeach other. Each of transistors MNA0, MNA1, MNB0 is an NMOS transistor.Each of transistors MPB0, MPB1, MPA0 is a PMOS transistor.

In some embodiments, one or more of transistors MNA0, MNA1, MNB0 is aPMOS transistor. In some embodiments, one or more of transistors MPB0,MPB1, MPA0 is an NMOS transistor.

Each of a gate terminal of transistor MPA0, a gate terminal and a drainterminal of transistor MNA1 are coupled together. A source terminal oftransistor MPA0 is coupled to voltage supply 204. Each of a drainterminal of transistor MPA0 and a gate terminal of transistor MNA0 arecoupled together.

Each of a source terminal of transistor MNA0 and a source terminal oftransistor MNA1 is coupled to voltage supply 210, and are also coupledtogether. A drain terminal of transistor MNA0 is coupled to asource/drain terminal of transistor MP0 by node 316. Transistors MPA0,MNA0, and MNA1 are configured to supply the source/drain terminal oftransistor MP0 or node 316 with reference voltage VSS.

Each of a gate terminal of MNB0 and a gate and drain terminal oftransistor MPB1 are coupled together. A source terminal of transistorMNB0 is coupled to voltage supply 210. Each of a gate terminal oftransistor MPB0 and a drain terminal of transistor MNB0 are coupledtogether.

Each of a source terminal of transistor MPB1 and a source terminal oftransistor MPB0 is coupled to voltage supply 204, and are also coupledtogether. A drain terminal of transistor MPB0 is coupled to thesource/drain terminal of transistor MN0 by node 324. Transistors MPB0,MPB1, and MNB0 are configured to supply the source/drain terminal oftransistor MN0 or node 324 with voltage VDD.

Each of a body or bulk of transistors MPB0, MPB1, MPA0 is coupled tovoltage supply 204. Each of a body or bulk of transistors MNA0, MNA1,MNB0 are coupled to voltage supply 210.

Transistor MNA1 is configured as a diode-coupled transistor since thegate terminal and the drain terminal of transistor MNA1 are coupledtogether. In some embodiments, transistor MNA1 is configured insaturation mode and is turned on, and is configured to operate as apull-down resistor. When transistor MNA1 is turned on, and configured aspull-down resistor, the gate and drain terminal of transistor MPA0 arepulled to VSS by being coupled to second voltage supply 210, therebycausing transistor MPA0 to turn on. In response to being turned on,transistor MPA0 couples the gate terminal of transistor MNA0 to firstvoltage supply 204, thereby causing transistor MNA0 to be turned on. Inresponse to being turned on, transistor MNA0 is configured to supply thesecond supply voltage VSS to node 316 and the source/drain terminal oftransistor MP0. In some embodiments, transistors MPA0 and MNA1 arereferred to as a tie-high circuit. In some embodiments, transistor MNA0is referred to as a tie-low circuit. By including transistors MPA0,MNA0, and MNA1 in Schmitt trigger circuit 300A, transistors MPA0, MNA0,and MNA1 are configured to cause the source/drain terminal of transistorMP0 to not be directly connected to second supply voltage VSS, whichreduces the possibility one or more parasitic PNP transistors in Schmitttrigger circuit 300A or adjacent circuits from turning on, therebyimproving ESD performance.

Transistor MPB1 is configured as a diode-coupled transistor since thegate terminal and the drain terminal of transistor MPB1 are coupledtogether. In some embodiments, transistor MPB1 is configured insaturation mode and is turned on, and is configured to operate as apull-up resistor. When transistor MPB1 is turned on, and configured aspull-up resistor, the gate and drain terminal of transistor MNB0 arepulled to VDD by being coupled to first voltage supply 204, therebycausing transistor MNB0 to turn on. In response to being turned on,transistor MNB0 couples the gate terminal of transistor MPB0 to secondvoltage supply 210, thereby causing transistor MPB0 to be turned on. Inresponse to being turned on, transistor MPB0 is configured to supply thefirst supply voltage VDD to node 324 and the source/drain terminal oftransistor MN0. In some embodiments, transistors MNB0 and MPB1 arereferred to as a tie-low circuit. In some embodiments, transistor MPB0is referred to as a tie-high circuit. By including transistors MNB0,MPB0, and MPB1 in Schmitt trigger circuit 300A, transistors MNB0, MPB0,and MPB1 are configured to cause the source/drain terminal of transistorMN0 to not be directly connected to first supply voltage VDD, whichreduces the possibility one or more parasitic NPN transistors in Schmitttrigger circuit 300A or adjacent circuits from turning on, therebyimproving ESD performance.

Other configurations, number of transistors or transistor types forSchmitt trigger circuit 300A are within the scope of the presentdisclosure.

FIGS. 3B-3D are diagrams of an IC 300B, in accordance with someembodiments.

FIG. 3B is top-level view of IC 300B, in accordance with someembodiments.

FIG. 3C is a cross-sectional view of IC 300B as intersected by planeC-C′, in accordance with some embodiments.

FIG. 3D is a cross-sectional view of IC 200B as intersected by planeD-D′, in accordance with some embodiments.

IC 300B is an embodiment of Schmitt trigger circuit 300A of FIG. 3A, andsimilar detailed description is therefore omitted.

IC 300B is manufactured based on a corresponding layout design similarto IC 300B. For brevity FIGS. 3B-3D are described as a corresponding IC300B, but in some embodiments, FIGS. 3B-3D further correspond to layoutdesigns having features similar to IC 300B, and structural elements ofIC 300B further correspond to layout patterns, and structuralrelationships including alignment, lengths and widths, as well asconfigurations and layers of a corresponding layout design of IC 300Bare similar to the structural relationships and configurations andlayers of IC 300B, and similar detailed description will not bedescribed for brevity.

For purposes of brevity and succinctness, common reference numerals andelements to the FIGS. 2A-2D and 3A-3D retain the same number. Further,discussion on these elements is not presented again to avoid repetition.Differences between the figures are called out with separate, newreference numerals, and discussion of the differences. Furthermore,similar elements from FIG. 3A correspond to elements in FIGS. 3B-3D withan “A” after the similar reference numeral. For example, circuit 326 inFIG. 3A corresponds to circuit 326A in FIGS. 3B-3D, and circuit 318 inFIG. 3A corresponds to circuit 318A in FIGS. 3B-3D.

IC 300B is a variation of IC 200B of FIGS. 2B-2D, and similar detaileddescription is therefore omitted. For example, in comparison with IC200B of FIGS. 2B-2D, a substrate 332 of IC 300B replaces substrate 232of FIGS. 2B-2D, a well 330 of IC 300B replaces well 230 of FIGS. 2B-2D,a set of active regions 334 of IC 300B replaces active regions 234 and240A of FIGS. 2B-2D, a set of active regions 336 of IC 300B replacesactive regions 236 and 238A of FIGS. 2B-2D, vias 352 of IC 300B replacesvias 252 of FIGS. 2B-2D, a circuit 318A of IC 300B replaces circuit 218Aof FIGS. 2B-2D, a circuit 326A of IC 300B replaces circuit 226A of FIGS.2B-2D, and similar detailed description is therefore omitted.

IC 300B includes substrate 332. The substrate 332 includes well 330 anda set of active regions 336.

The set of active regions 336 (including active regions 236A, 236B, 336Cand 336D) is positioned outside of well 330. The set of active regions336 extend in a first direction X, are on a first level 201 (FIGS. 2C,2D), and is separated from set of active regions 334 in the seconddirection. The set of active regions 336 have a dopant type opposite ofthe dopant type of at least the substrate 332 or the set of activeregions 334. The set of active regions 336 have the first dopant type.In some embodiments, the set of active regions 336 have the seconddopant type. Each of active regions 236A, 236B, 336C and 336D areseparated from each other in the first direction X.

Well 330 is in substrate 332. Well 330 includes a set of active regions334. The set of active regions 334 (including active regions 234A, 234B,334C and 334D) extend in the first direction, is on the first level 201(FIGS. 2C, 2D), and is in well 330A. The set of active regions 334 havea dopant type opposite of the dopant type of the well 330. The set ofactive regions 334 have the second dopant type. In some embodiments, theset of active regions 334 have the first dopant type. Each of activeregions 234A, 234B, 334C and 334D are separated from each other in thefirst direction X.

IC 300B further include set of transistors 202A and feedback transistor212A. Active region 234A corresponds to the active regions oftransistors MP2 and MP1 of the set of transistors 202A. Active region234B corresponds to the active regions of transistor MP0 of feedbacktransistor 212A.

IC 300B further includes set of transistors 208A and feedback transistor220A. Active region 236A corresponds to the active regions oftransistors MN2 and MN1 of the set of transistors 208A. Active region236B corresponds to the active regions of transistor MN0 of feedbacktransistor 220A.

IC 300B further includes a circuit 326A. Circuit 326A is configured tosupply voltage VDD to at least one transistor in set of transistors 208Aor feedback transistor 220A. Active region 334C corresponds to theactive regions of transistors MPB0 and MPB1 of circuit 326A. Activeregion 336D corresponds to the active regions of transistor MNB0 ofcircuit 326A.

IC 300B further includes a circuit 318A. Circuit 318A is configured tosupply voltage VSS to at least one transistor in set of transistors 202Aor feedback transistor 212A. Active region 336C corresponds to theactive regions of transistors MNA0 and MNA1 of circuit 318A. Activeregion 334D corresponds to the active regions of transistor MPA0 ofcircuit 318A.

IC 300B further includes a power rail 242 configured to supply thevoltage VDD to at least circuit 326A, circuit 318A, or set oftransistors 302A. In some embodiments, power rail 242 is configured tosupply the voltage VDD to at least a transistor in circuit 326A orcircuit 318A. Power rail 242 is configured to supply voltage VDD totransistor MPA0 within the circuit 318A. Power rail 242 is configured tosupply voltage VDD to transistors MPB0 and MPB1 within circuit 326A.Power rail 242 is electrically connected to at least circuit 326A orcircuit 318A.

IC 300B further includes a power rail 244 configured to supply thevoltage VSS to at least circuit 318A, circuit 326A or set of transistors308A. In some embodiments, power rail 244 is configured to supply thevoltage VSS to at least a transistor in circuit 326A or circuit 318A.Power rail 244 is configured to supply voltage VSS to transistor MNB0within circuit 326A. Power rail 244 is configured to supply voltage VSSto transistors MNA0 and MNA1 within circuit 318A. Power rail 244 iselectrically connected to at least circuit 326A or 318A.

Well 330 is biased at voltage VDD by body/bulk 234C. Well 330 includesactive regions 234A, 234B, 234C, 334C and 334D. Active regions 234A,334C and 334D are configured to receive voltage VDD from power rail 242.Active region 234B is indirectly coupled to power rail 244 by at leasttransistor MNA0. Thus, active region 234B is not directly coupled topower rail 244 thereby reducing the possibility of parasitic PNPtransistors in well 330 and abutting circuits from turning on.

Substrate 330A is biased at voltage VSS by body/bulk 236C. Substrate330A includes active regions 236A, 236B, 236C, 336C and 336D. Activeregions 236A, 336C and 336D are configured to receive voltage VSS frompower rail 244. Active region 236B is indirectly coupled to power rail242 by transistor MPB0. Thus, active region 236B is not directly coupledto power rail 242 thereby reducing the possibility of parasitic NPNtransistors in substrate 330A and abutting circuits from turning on.

In some embodiments, reduction of PNP and/or NPN parasitic transistorsturning on, increases the breakdown voltage of IC 300B resulting inimproved ESD performance than other approaches.

Feedback transistor 212A includes transistor MP0. Feedback transistor220A includes transistor MN0. Circuit 326A includes at least transistorMPB0, MPB1 or MNB0. Circuit 318A includes transistor MNA0, MNA1 or MPA0.

Transistor MNA0 is an NMOS transistor including a gate 344B, a S/D 391,and a S/D 393. Gate 344B is separated from gate 344A by removed gateportion 386C1. Gate 344A extends in the second direction, and is on thethird level. S/D 391 of transistor MNA0 and S/D region 393 oftransistors MNA0 and MNA1 are within active region 336C.

Transistor MPB0 is a PMOS transistor including gate 344A, a S/D 372, anda S/D 347. Gate 344A extends in the second direction, and is on thethird level 203. S/D 372 of transistor MPB0 and S/D region 347 oftransistors MPB0 and MPB1 are within active region 334C.

Transistor MNA1 is an NMOS transistor including a gate 345B, S/D 393,and a S/D 398. Gate 345B is separated from gate 345A by removed gateportion 386C2. Gate 345A extends in the second direction, and is on thethird level. S/D 398 of transistor MNA1 is within active region 336C.

Transistor MPB1 is a PMOS transistor including gate 345A, S/D 347, and aS/D 346. Gate 345A extends in the second direction, and is on the thirdlevel 203. S/D 346 of transistor MPB1 is within active region 334C.

Transistor MNB0 is an NMOS transistor including a gate 386B, S/D 350,and a S/D 351. Gate 386B is separated from gate 386A by removed gateportion 386C2. Gate 386A extends in the second direction, and is on thethird level. S/D 350 of transistor MNB0 and S/D 351 of transistor MNB0is within active region 336D.

Transistor MPA0 is a PMOS transistor including gate 386A, a S/D 348, anda S/D 349. Gate 386A extends in the second direction, and is on thethird level 203. S/D 348 of transistor MPA0 and S/D 349 of transistorMPA0 are within active region 334D.

IC 300B further includes vias 352, via 373, via 374, via 376, vias383-385, and conductive structures 253, 354, 358, 360, 361, 371, 372 and377-380.

Vias 352, via 373, via 374, via 376 or vias 383-385 are similar to vias252 of FIGS. 2B-2D, and similar detailed description is thereforeomitted. Vias 352 include one or more of vias 252A1, 252A3, 352A1-352A5,352B1, 352B3, or 352B1-352B5. Vias 352 include other vias shown in FIG.3B that are not labelled, but are similar to vias 252A1-252A5 or vias252B1-252B5, and similar detailed description is omitted.

Conductive structures 253, 354, 358, 360, 361, 371, 372 and 377-380 aresimilar to conductive structures 254, 258, 260 and 278 of FIGS. 2B-2D,and similar detailed description is therefore omitted.

Conductive structure 354 is coupled to the power rail 244. Conductivestructure 354 is connected to S/D 350 of transistor MNB0 by via 352B5.Conductive structure 354 is configured to supply S/D 350 with voltageVSS.

Conductive structure 358 is coupled to the power rail 242. Conductivestructure 358 is connected to S/D 348 of transistor MPA0 by via 352A5.Conductive structure 358 is configured to supply S/D 248 with voltageVDD.

Conductive structure 372 is coupled to the power rail 244. Conductivestructure 372 is connected to S/D 393 of transistors MNA0 and MNA1 byvia 352B2. Conductive structure 372 is configured to supply S/D 393 oftransistors MNA0 and MNA1 with voltage VSS.

Conductive structure 371 is coupled to the power rail 242. Conductivestructure 371 is connected to S/D 347 of transistors MPB0 and MPB1 byvia 352A2. Conductive structure 371 is configured to supply S/D 347 oftransistors MPB0 and MPB1 with voltage VDD.

Conductive structure 380 connects gate 345B of transistor MNA1, S/Dregion 398 of transistor MNA1, and gate 386A of transistor MPA0together. Conductive structure 380 is connected to gate 345B oftransistor MNA1 by via 383. Conductive structure 380 is connected to S/Dregion 398 of transistor MNA1 by via 352B3. Conductive structure 380 isconnected to gate 386A of transistor MPA0 by via 370.

Conductive structure 361 connects gate 345A of transistor MPB1, S/Dregion 346 of transistor MPB1, and gate 386B of transistor MNB0together. Conductive structure 361 is connected to gate 345A oftransistor MPB1 by via 385. Conductive structure 361 is connected to S/Dregion 346 of transistor MPB1 by via 352A3. Conductive structure 361 isconnected to gate 386B of transistor MNB0 by via 374.

Conductive structure 360 connects gate 344A of transistor MPB0 and S/Dregion 351 of transistor MNB0. Conductive structure 360 is connected togate 344A of transistor MPB0 by via 384. Conductive structure 360 isconnected to S/D region 351 of transistor MNB0 by via 352B4.

Conductive structure 377 connects gate 344B of transistor MNA0 and S/Dregion 349 of transistor MPA0. Conductive structure 377 is connected togate 344B of transistor MNA0 by via 373. Conductive structure 377 isconnected to S/D region 349 of transistor MPA0 by via 352A4.

Conductive structure 378 connects S/D region 372 of transistor MPB0 andS/D region 266A of transistor MN0. Conductive structure 378 is connectedto S/D region 372 of transistor MPB0 by via 352A1. Conductive structure378 is connected to S/D region 266A of transistor MN0 by via 252A3.

Conductive structure 379 connects S/D region 391 of transistor MNA0 andS/D region 284A of transistor MP0. Conductive structure 379 is connectedto S/D region 391 of transistor MNA0 by via 352B1. Conductive structure379 is connected to S/D region 284A of transistor MP0 by via 252A1.

Transistors MPB0 and MNA0 are configured to supply a correspondingvoltage VDD and VSS to corresponding feedback transistors 220A and 212A.In some embodiments, by configuring transistor MPB0 to supply voltageVDD to feedback transistor 220A, and by configuring transistor MNA0 tosupply voltage VSS to feedback transistor 212A, active regions 236B and234B of corresponding feedback transistors 220A and 212A are notdirectly coupled to voltage supplies 204 and 206, thereby causing one ormore parasitic PNP or NPN transistors that are part of or next to IC300B to turn off or remain off during an ESD event at voltage supplies204 and 206, thereby resulting in IC 300B to have a larger breakdownvoltage and better ESD performance than other approaches.

FIG. 4A is a circuit diagram of a Schmitt trigger circuit 400A, inaccordance with some embodiments.

Schmitt trigger circuit 400A is an embodiment of Schmitt trigger circuit106 in IC 100, and similar detailed description is therefore omitted.

Schmitt trigger circuit 400A is a variation of Schmitt trigger circuit200A of FIG. 2A or Schmitt trigger circuit 300A of FIG. 3A, and similardetailed description is therefore omitted. For example, in comparisonwith Schmitt trigger circuit 300A of FIG. 3A, a circuit 418 of Schmitttrigger circuit 400A replaces circuit 318 of FIG. 3A, and a circuit 426of Schmitt trigger circuit 400A replaces circuit 326 of FIG. 3A, node416 replaces node 316, and node 424 replaces node 324, and similardetailed description is therefore omitted.

Schmitt trigger circuit 400A includes set of PMOS transistors 202, setof NMOS transistors 208, feedback PMOS transistor 212, feedback PMOStransistor 220, and circuits 418 and 426.

Circuit 418 is a variation of circuit 318 of FIG. 3A, circuit 426 is avariation of circuit 326 of FIG. 3A, and similar detailed description istherefore omitted. For example, in comparison with circuit 318 of FIG.3A, circuit 418 further includes transistor 422, and similar detaileddescription is therefore omitted. Similarly, in comparison with circuit326 of FIG. 3A, circuit 426 further includes transistor 423, and similardetailed description is therefore omitted.

Circuit 418 is electrically connected to node 416, first voltage supply204, second voltage supply 210, and transistor MP0 of feedbacktransistor 212. Circuit 418 is configured to supply the second supplyvoltage VSS to node 416 and the drain/source terminal of transistor MP0.By including circuit 418 in Schmitt trigger circuit 400A, circuit 418 isconfigured to cause a drain or source in the feedback transistor 212 tonot be directly connected to second supply voltage VSS, which reducesthe possibility one or more parasitic NPN transistors in Schmitt triggercircuit 400A or adjacent circuits from turning on, thereby improving ESDperformance.

Circuit 426 is electrically connected to node 424, first voltage supply204 and second voltage supply 210, transistor MN0 of feedback transistor220. Circuit 426 is configured to supply the first supply voltage VDD tonode 424 and the drain/source terminal of transistor MN0. By includingcircuit 426 in Schmitt trigger circuit 400A, circuit 426 is configuredto cause a drain or source in the feedback transistor 220 to not bedirectly connected to first supply voltage VDD, which reduces thepossibility one or more parasitic NPN transistors in Schmitt triggercircuit 400A or adjacent circuits from turning on, thereby improving ESDperformance.

Circuit 418 includes transistors MN3, MNA0, MNA1 and MPA0. Circuit 426includes transistor MP3, MPB0, MPB1, and MNB0. Each of transistors MN3,MNA0, MNA1, MNB0 is an NMOS transistor. Each of transistors, MP3, MPB0,MPB1, MPA0 is a PMOS transistor.

In some embodiments, one or more of transistors MN3, MNA0, MNA1, MNB0 isa PMOS transistor. In some embodiments, one or more of transistors MP3,MPB0, MPB1, MPA0 is an NMOS transistor.

Each of a drain terminal of transistor MNA0 and a source/drain terminalof transistor MN3 are coupled together at node 431.

Each of a gate terminal of transistor MN3, the drain/source terminal oftransistor MPB0, and a drain/source terminal of transistor MP3 arecoupled together at node 433. The gate terminal of transistor MN3 isconfigured to receive a signal 415 (e.g., labelled as “TIE-HIGH”) thatcorresponds to a signal of node 433.

Each of a drain/source terminal of transistor MN3 and the source/drainterminal of transistor MP0 are coupled together at node 416.

Transistors MN3, MPA0, MNA0, and MNA1 are configured to supply thesource/drain terminal of transistor MP0 or node 416 with referencevoltage VSS.

Each of a drain terminal of transistor MPB0 and a source/drain terminalof transistor MP3 are coupled together at node 433.

Each of a gate terminal of transistor MP3, the drain/source terminal oftransistor MNA0, and a drain/source terminal of transistor MN3 arecoupled together at node 431. The gate terminal of transistor MP3 isconfigured to receive a signal 417 (e.g., labelled as “TIE-LOW” thatcorresponds to a signal of node 431.

Each of a drain/source terminal of transistor MP3 and the source/drainterminal of transistor MN0 are coupled together at node 424. TransistorMP3, MPB0, MPB1, and MNB0 are configured to supply the source/drainterminal of transistor MN0 or by node 424 with voltage VDD.

Each of a body or bulk of transistors MP3, MPB0, MPB1, MPA0 is coupledto voltage supply 404. Each of a body of transistors MN3, MNA0, MNA1,MNB0 are coupled to voltage supply 410.

The operation of transistors MPA0, MNA1, and MNA0 of FIG. 4A are similarto FIG. 3A, and are not described for brevity, and similar detaileddescription is therefore omitted.

The operation of transistors MNB0, MPB1, and MPB0 of FIG. 4A are similarto FIG. 3A, and are not described for brevity, and similar detaileddescription is therefore omitted.

Transistors MPA0, MNA1, and MNA0 are configured to set the voltage ofnode 431 at reference voltage VSS. Transistor MN3 is turned on inresponse to signal TIE-HIGH being equal to voltage VDD, thereby causingnode 416 to be coupled to node 431, and the voltage of node 416 is equalto reference voltage VSS.

Transistors MNB0, MPB1, and MPB0 are configured to set the voltage ofnode 433 at voltage VDD. Transistor MP3 is turned on in response tosignal TIE-LOW being equal to reference voltage VSS, thereby causingnode 424 to be coupled to node 433, and the voltage of node 424 is equalto voltage VDD.

By including transistors MN3, MPA0, MNA0, and MNA1 in Schmitt triggercircuit 400A, transistors MN3, MPA0, MNA0, and MNA1 are configured tocause the source/drain terminal of transistor MP0 to not be directlyconnected to second supply voltage VSS, which reduces the possibilityone or more parasitic PNP transistors in Schmitt trigger circuit 400A oradjacent circuits from turning on, thereby improving ESD performance.Furthermore, a gate of transistor MN3 in Schmitt trigger circuit 400A isnot directly coupled to first voltage supply 204, thereby preventing thegate oxide of the gate of transistor MN3 from rupturing or breaking downin response to ESD events at first voltage supply 204 or second voltagesupply 210 resulting in improved ESD performance than other approaches.

By including transistors MP3, MNB0, MPB0, and MPB1 in Schmitt triggercircuit 300A, transistors MP3, MNB0, MPB0, and MPB1 are configured tocause the source/drain terminal of transistor MN0 to not be directlyconnected to first supply voltage VDD, which reduces the possibility oneor more parasitic NPN transistors in Schmitt trigger circuit 400A oradjacent circuits from turning on, thereby improving ESD performance.Furthermore, a gate of transistor MP3 in Schmitt trigger circuit 400A isnot directly coupled to second voltage supply 210, thereby preventingthe gate oxide of the gate of transistor MP3 from rupturing or breakingdown in response to ESD events at first voltage supply 204 or secondvoltage supply 210 resulting in improved ESD performance than otherapproaches.

Other configurations, number of transistors or transistor types forSchmitt trigger circuit 400A are within the scope of the presentdisclosure.

FIGS. 4B-4D are diagrams of an IC 400B, in accordance with someembodiments.

FIG. 4B is top-level view of IC 400B, in accordance with someembodiments.

FIG. 4C is a cross-sectional view of IC 400B as intersected by planeE-E′, in accordance with some embodiments.

FIG. 4D is a cross-sectional view of IC 400B as intersected by planeF-F′, in accordance with some embodiments.

IC 400B is an embodiment of Schmitt trigger circuit 400A of FIG. 4A, andsimilar detailed description is therefore omitted.

IC 400B is manufactured based on a corresponding layout design similarto IC 400B. For brevity FIGS. 4B-4D are described as a corresponding IC400B, but in some embodiments, FIGS. 4B-4D further correspond to layoutdesigns having features similar to IC 400B, and structural elements ofIC 400B further correspond to layout patterns, and structuralrelationships including alignment, lengths and widths, as well asconfigurations and layers of a corresponding layout design of IC 400Bare similar to the structural relationships and configurations andlayers of IC 400B, and similar detailed description will not bedescribed for brevity.

For purposes of brevity and succinctness, common reference numerals andelements to the FIGS. 2A-2D, 3A-3D, and 4A-4D retain the same number.Further, discussion on these elements is not presented again to avoidrepetition. Differences between the figures are called out withseparate, new reference numerals, and discussion of the differences.Furthermore, similar elements from FIG. 4A correspond to elements inFIGS. 4B-4D with an “A” after the similar reference numeral. Forexample, circuit 426 in FIG. 4A corresponds to circuit 426A in FIGS.4B-4D, and circuit 418 in FIG. 4A corresponds to circuit 418A in FIGS.4B-4D.

IC 400B is a variation of IC 300B of FIGS. 3B-3D, and similar detaileddescription is therefore omitted. For example, in comparison with IC300B of FIGS. 3B-3D, IC 400B further includes a circuit 422A and acircuit 423A, and similar detailed description is therefore omitted. IC400B includes IC 300B and circuits 422A and 423A.

IC 400B is a variation of IC 300B of FIGS. 3B-3D, and similar detaileddescription is therefore omitted. For example, in comparison with IC300B of FIGS. 3B-3D, a set of active regions 434 of IC 400B replacesactive regions 334 of FIGS. 3B-3D, a set of active regions 436 of IC400B replaces active regions 336 of FIGS. 3B-3D, a circuit 418A of IC400B replaces circuit 318A of FIGS. 3B-3D, a circuit 426A of IC 400Breplaces circuit 326A of FIGS. 3B-3D, and similar detailed descriptionis therefore omitted.

The set of active regions 436 includes active regions 236A, 236B, 436Cand 336D.

Active region 436C replaces active region 336C of IC 300B of FIGS.3B-3D, and similar detailed description is therefore omitted. Activeregion 436C is positioned in substrate 332, and is outside of well 330.Each of active regions 236A, 236B, 436C and 336D are separated from eachother in the first direction X.

Well 330 includes set of active regions 434. The set of active regions434 includes active regions 234A, 234B, 434C and 334D. Active region434C replaces active region 334C of IC 300B of FIGS. 3B-3D, and similardetailed description is therefore omitted. Active region 434C ispositioned in well 330. Each of active regions 234A, 234B, 434C and 334Dare separated from each other in the first direction X.

Active region 434C corresponds to the active regions of transistors MP3,MPB0 and MPB1 of circuit 426A. Active region 436C corresponds to theactive regions of transistors MN3, MNA0 and MNA1 of circuit 418A.

Active region 234B of transistor MP0 is indirectly coupled to power rail244 by at least transistor MN3 or MNA0. Thus, active region 234B is notdirectly coupled to power rail 244 thereby reducing the possibility ofparasitic PNP transistors in well 330 and abutting circuits from turningon.

Active region 236B of transistor MN0 is indirectly coupled to power rail242 by at least transistor MP3 or MPB0. Thus, active region 236B is notdirectly coupled to power rail 242 thereby reducing the possibility ofparasitic NPN transistors in substrate 330A and abutting circuits fromturning on.

In some embodiments, reduction of PNP and/or NPN parasitic transistorsturning on, increases the breakdown voltage of IC 400B resulting inimproved ESD performance than other approaches.

Circuit 426A includes at least transistor MP3, MPB0, MPB1 or MNB0.Circuit 418A includes transistor MN3, MNA0, MNA1 or MPA0.

Transistor MN3 is an NMOS transistor including a gate 446B, a S/D 472,and S/D 391. Gate 446B is separated from gate 446A by removed gateportion 386C4. Gate 446B extends in the second direction, and is on thethird level. S/D region 472 of transistor MN3, and S/D 391 oftransistors MNA0 and MN3 are within active region 436C. In comparisonwith FIGS. 3B-3D, S/D 391 of IC 400B is the source/drain of each oftransistors MNA0 and MN3.

Transistor MP3 is a PMOS transistor including a gate 446A, a S/D 448,and S/D 372. Gate 446A extends in the second direction, and is on thethird level. S/D region 448 of transistor MP3, and S/D 372 oftransistors MPB0 and MP3 are within active region 434C. In comparisonwith FIGS. 3B-3D, S/D 372 of IC 400B is the source/drain of each oftransistors MPB0 and MP3.

IC 400B further includes vias 452, via 373, via 374, via 376, vias383-385, via 484 and via 473, and conductive structures 253, 354, 358,360, 361, 371, 372, 377, 380 and 478-481.

Vias 452, via 373, via 374, via 376, vias 383-385, via 484 or via 473are similar to vias 252 or 352, and similar detailed description istherefore omitted. Vias 452 include one or more of vias 252A1, 252A3,352A1-352A5, 352B1, 352B3, 352B1-352B5, 452A1 or 452B1. Vias 452 includeother vias shown in FIG. 4B that are not labelled, but are similar tovias 252A1-252A5 or vias 252B1-252B5, and similar detailed descriptionis omitted.

Conductive structures 253, 354, 358, 360, 361, 371, 372, 377, 380 and478-481 are similar to conductive structures 254, 258, 260 and 278 ofFIGS. 2B-2D, and similar detailed description is therefore omitted. Incomparison with IC 300B of FIGS. 3B-3D, conductive structures 478-479 ofIC 400B replace corresponding conductive structures 378-379 of FIGS.3B-3D, and similar detailed description is therefore omitted.

Conductive structure 478 connects S/D region 448 of transistor MP3 andS/D region 266A of transistor MN0. Conductive structure 478 is connectedto S/D region 448 of transistor MP3 by via 452A1. Conductive structure478 is connected to S/D region 266A of transistor MN0 by via 252A3.

Conductive structure 479 connects S/D region 472 of transistor MN3 andS/D region 284A of transistor MP0. Conductive structure 479 is connectedto S/D region 472 of transistor MN3 by via 452B1. Conductive structure479 is connected to S/D region 284A of transistor MP0 by via 252A1.

Conductive structure 480 connects gate 446B of transistor MN3, S/Dregion 372 of transistor MP3, and S/D region 372 of transistor MPB0.Conductive structure 480 is connected to gate 446B of transistor MN3 byvia 473. Conductive structure 480 is connected to S/D region 372 oftransistor MP3, and S/D region 372 of transistor MPB0 by via 352A1.

Conductive structure 481 connects gate 446A of transistor MP3, S/Dregion 391 of transistor MN3, and S/D region 391 of transistor MNA0.Conductive structure 481 is connected to gate 446A of transistor MP3 byvia 484. Conductive structure 481 is connected to S/D region 391 oftransistor MN3, and S/D region 391 of transistor MNA0 by via 352B1.

Transistors MPB0 and MP3 are configured to supply voltage VDD tofeedback transistor 220A. Transistors MNA0 and MN3 are configured tosupply voltage VSS to feedback transistor 212A. In some embodiments, byconfiguring transistors MPB0 and MP3 to supply voltage VDD to feedbacktransistor 220A, and by configuring transistors MNA0 and MN3 to supplyvoltage VSS to feedback transistor 212A, active regions 236B and 234B ofcorresponding feedback transistors 220A and 212A are not directlycoupled to voltage supplies 204 and 206, thereby causing one or moreparasitic PNP or NPN transistors that are part of or next to IC 400B toturn off or remain off during an ESD event at voltage supplies 204 and206, thereby resulting in IC 400B to have a larger breakdown voltage andbetter ESD performance than other approaches.

FIG. 5A is a functional flow chart of a method 500A of manufacturing anIC device, in accordance with some embodiments. It is understood thatadditional operations may be performed before, during, and/or after themethod 500A depicted in FIG. 5A, and that some other processes may onlybe briefly described herein.

In some embodiments, other order of operations of methods 500A-700 and900 is within the scope of the present disclosure. Methods 500A-700 and900 include exemplary operations, but the operations are not necessarilyperformed in the order shown. Operations may be added, replaced, changedorder, and/or eliminated as appropriate, in accordance with the spiritand scope of disclosed embodiments. In some embodiments, one or more ofthe operations of at least methods 500A-700 and 900 is not performed.

In some embodiments, method 500A is an embodiment of operation 604 or606 of method 600. In some embodiments, the methods 500A-700 and 900 areusable to manufacture or fabricate at least IC 100, 200A-200B,300A-300B, and 400A-400B.

In some embodiments, other order of operations of methods 500A-700 and900 are within the scope of the present disclosure. Methods 500A-700 and900 include exemplary operations, but the operations are not necessarilyperformed in the order shown. Operations may be added, replaced, changedorder, and/or eliminated as appropriate, in accordance with the spiritand scope of disclosed embodiments.

In operation 502 of method 500A, a first set of transistors arefabricated on a semiconductor wafer or substrate (232, 332). In someembodiments, the first set of transistors of method 500A include a firstset of active regions that are formed in a first well (well 230, 330) inthe substrate. In some embodiments, the first set of transistors ofmethod 500A includes one or more transistors in the set of activeregions 234, 334, or 434. In some embodiments, the first set oftransistors of method 500A include at least transistors MP2, MP1, orMP0. In some embodiments, the set of transistors of method 500A includesone or more transistors described herein.

In operation 504 of method 500A, a second set of transistors arefabricated on the semiconductor wafer or substrate. In some embodiments,the second set of transistors of method 500A include a second set ofactive regions that are formed in the substrate. In some embodiments,the second set of transistors of method 500A includes one or moretransistors in the set of active regions 236, 336 or 436. In someembodiments, the second set of transistors of method 500A include atleast transistors MN2, MN1, or MN0. In some embodiments, the second setof transistors of method 500A includes one or more transistors describedherein.

In operation 506 of method 500A, a first circuit is formed on thesemiconductor wafer or substrate. In some embodiments, the first circuitof method 500A includes a third set of active regions formed within thefirst well. In some embodiments, the third set of active regions ofmethod 500A includes active regions 240A, 334C, 334D or 434C. In someembodiments, the first circuit of method 500A includes circuit 218,218A, 318, 318A, 418 or 418A. The first circuit is configured to supplya first voltage (VDD or VSS) to at least one transistor in the secondset of transistors.

In operation 508 of method 500A, a second circuit is formed on thesemiconductor wafer or substrate. In some embodiments, the secondcircuit of method 500A includes a fourth set of active regions formed inthe substrate or wafer. In some embodiments, the fourth set of activeregions of method 500A includes active regions 238A, 336C, 336D or 436C.In some embodiments, the second circuit of method 500A includes circuit226, 226A, 326, 326A, 426 or 426A. The second circuit is configured tosupply a second voltage (VSS or VDD) to at least one transistor in thefirst set of transistors. In some embodiments, the fourth set of activeregions is outside of the first well.

In some embodiments, one or more of operations 502, 504, 506 and 508further include fabricating source and drain regions of the set oftransistors in the first, second, third or fourth set of active regions.In some embodiments, the substrate comprises p-type dopants. In someembodiments, the p-dopants include boron, aluminum or other suitablep-type dopants. In some embodiments, the first well includes at leastwell 230 or 330. In some embodiments, the first well comprises n-typedopants. In some embodiments, the n-type dopants include phosphorus,arsenic or other suitable n-type dopants. In some embodiments, then-type dopant concentration ranges from about 1×10¹² atoms/cm² to about1×10¹⁴ atoms/cm².

In some embodiments, the formation of the source/drain featuresincludes, a portion of the substrate is removed to form recesses at anedge of spacers, and a filling process is then performed by filling therecesses in the substrate. In some embodiments, the recesses are etched,for example, a wet etching or a dry etching, after removal of a padoxide layer or a sacrificial oxide layer. In some embodiments, the etchprocess is performed to remove a top surface portion of the activeregion adjacent to an isolation region, such as an STI region. In someembodiments, the filling process is performed by an epitaxy or epitaxial(epi) process. In some embodiments, the recesses are filled using agrowth process which is concurrent with an etch process where a growthrate of the growth process is greater than an etch rate of the etchprocess. In some embodiments, the recesses are filled using acombination of growth process and etch process. For example, a layer ofmaterial is grown in the recess and then the grown material is subjectedto an etch process to remove a portion of the material. Then asubsequent growth process is performed on the etched material until adesired thickness of the material in the recess is achieved. In someembodiments, the growth process continues until a top surface of thematerial is above the top surface of the substrate. In some embodiments,the growth process is continued until the top surface of the material isco-planar with the top surface of the substrate. In some embodiments, aportion of the first well is removed by an isotropic or an anisotropicetch process. The etch process selectively etches the first well withoutetching a gate structure and any spacers. In some embodiments, the etchprocess is performed using a reactive ion etch (RIE), wet etching, orother suitable techniques. In some embodiments, a semiconductor materialis deposited in the recesses to form the source/drain features. In someembodiments, an epi process is performed to deposit the semiconductormaterial in the recesses. In some embodiments, the epi process includesa selective epitaxy growth (SEG) process, CVD process, molecular beamepitaxy (MBE), other suitable processes, and/or combination thereof. Theepi process uses gaseous and/or liquid precursors, which interacts witha composition of substrate. In some embodiments, the source/drainfeatures include epitaxially grown silicon (epi Si), silicon carbide, orsilicon germanium. Source/drain features of the IC device associatedwith the gate structure are in-situ doped or undoped during the epiprocess in some instances. When source/drain features are undoped duringthe epi process, source/drain features are doped during a subsequentprocess in some instances. The subsequent doping process is achieved byan ion implantation, plasma immersion ion implantation, gas and/or solidsource diffusion, other suitable processes, and/or combination thereof.In some embodiments, source/drain features are further exposed toannealing processes after forming source/drain features and/or after thesubsequent doping process.

In some embodiments, one or more of operations 502, 504, 506 and 508further include forming contacts of the first set of transistors, thesecond set of transistors, the first circuit or the second circuit.

In some embodiments, one or more of operations 502, 504, 506 and 508further include forming one or more gates of the first set oftransistors, the second set of transistors, the first circuit or thesecond circuit. In some embodiments, the one or more gates of method500A include one or more of gates 246A-246B, 264, 344A-344B, 345A-345B,386A-386B or 446A-446B.

In some embodiments, the one or more gates of method 500A is between thedrain and the source region. In some embodiments, the gate is over thefirst well and the substrate. In some embodiments, fabricating the gateregions of method 500A includes performing one or more depositionprocesses to form one or more dielectric material layers. In someembodiments, a deposition process includes a chemical vapor deposition(CVD), a plasma enhanced CVD (PECVD), an atomic layer deposition (ALD),or other process suitable for depositing one or more material layers. Insome embodiments, fabricating the gate regions includes performing oneor more deposition processes to form one or more conductive materiallayers. In some embodiments, fabricating the gate regions includesforming gate electrodes or dummy gate electrodes. In some embodiments,fabricating the gate regions includes depositing or growing at least onedielectric layer, e.g., gate dielectric. In some embodiments, gateregions are formed using a doped or non-doped polycrystalline silicon(or polysilicon). In some embodiments, the gate regions include a metal,such as Al, Cu, W, Ti, Ta, TiN, TaN, NiSi, CoSi, other suitableconductive materials, or combinations thereof.

In operation 512 of method 500A, a conductive material is deposited onthe wafer or substrate on a second level (e.g., M0, M1, M2, M3, etc.) ofthe integrated circuit thereby forming at least a first power rail or asecond power rail. In some embodiments, the first power rail of method500A includes one or more of power rail 242 or 244. In some embodiments,the second power rail of method 500A includes one or more of power rail244 or 242. In some embodiments, the first power rail or second powerrail of method 500A includes one or more conductors in the “METAL layer”of FIG. 2B-2D, 3B-3D or 4B-4D.

In operation 514 of method 500A, a conductive material is deposited onthe wafer or substrate on the second level (e.g., M0, M1, M2, M3, etc.)of the integrated circuit thereby forming a first set of conductivestructures. In some embodiments, the first set of conductive structuresof method 500A includes at least conductive structures 253, 254, 258,260 or 278, conductive structures 354, 358, 360, 361, 371, 372 or377-380, or conductive structures 478-481. In some embodiments, thefirst set of conductive structures of method 500A includes one or moreconductors in the “METAL layer” of FIG. 2B-2D, 3B-3D or 4B-4D.

In some embodiments, one or more of operations 502, 504, 506, 508, 510or 512 of method 500A include using a combination of photolithographyand material removal processes to form openings in an insulating layer(not shown) over the substrate. In some embodiments, thephotolithography process includes patterning a photoresist, such as apositive photoresist or a negative photoresist. In some embodiments, thephotolithography process includes forming a hard mask, an antireflectivestructure, or another suitable photolithography structure. In someembodiments, the material removal process includes a wet etchingprocess, a dry etching process, an RIE process, laser drilling oranother suitable etching process. The openings are then filled withconductive material, e.g., copper, aluminum, titanium, nickel, tungsten,or other suitable conductive material. In some embodiments, the openingsare filled using CVD, PVD, sputtering, ALD or other suitable formationprocess.

In some embodiments, at least one or more operations of method 500A isperformed by system 900 of FIG. 9 . In some embodiments, at least onemethod(s), such as method 500A discussed above, is performed in whole orin part by at least one manufacturing system, including system 900. Oneor more of the operations of method 500A is performed by IC fab 940(FIG. 9 ) to fabricate IC device 960. In some embodiments, one or moreof the operations of method 500A is performed by fabrication tools 952to fabricate wafer 942.

In some embodiments, the conductive material includes copper, aluminum,titanium, nickel, tungsten, or other suitable conductive material. Insome embodiments, the openings and trench are filled using CVD, PVD,sputtering, ALD or other suitable formation process. In someembodiments, after conductive material is deposited in one or more ofoperations 502, 504, 506, 508, 510, 512 or 514, the conductive materialis planarized to supply a level surface for subsequent steps.

In some embodiments, one or more of the operations of method 500A, 500B,600, 700 or 900 are not performed.

One or more of the operations of methods 500A-700 and 900 are performedby a processing device configured to execute instructions formanufacturing an integrated circuit, such as at least IC 100, 200A-200B,300A-300B, and 400A-400B. In some embodiments, one or more operations ofmethods 500A-700 and 900 is performed using a same processing device asthat used in a different one or more operations of methods 500A-700 and900. In some embodiments, a different processing device is used toperform one or more operations of methods 500A-700 and 900 from thatused to perform a different one or more operations of methods 500A-700and 900. In some embodiments, other order of operations of method500A-700 and 900 is within the scope of the present disclosure. Method500A-700 and 900 includes exemplary operations, but the operations arenot necessarily performed in the order shown. Operations in method500A-700 and 900 may be added, replaced, changed order, and/oreliminated as appropriate, in accordance with the spirit and scope ofdisclosed embodiments.

FIG. 5B is a flowchart of a method 500B of operating an IC, inaccordance with some embodiments.

In some embodiments, the IC of method 500B includes one or more of IC100 or Schmitt trigger circuit 200A, 300A or 400A. It is understood thatmethod 500B utilizes features of one or more of IC 100 or Schmitttrigger circuit 200A, 300A or 400A.

In operation 552 of method 500B, an input signal IN is received by anIC. In some embodiments, the IC of method 500B includes IC 100 orSchmitt trigger circuit 200A, 300A or 400A.

In operation 554 of method 500B, an output signal OUT is generated bythe IC.

In operation 556 of method 500B, at least a first transistor in a firstcircuit of the IC is turned on thereby supplying a first voltage to afirst feedback transistor (transistor MP0) of the IC. In someembodiments, the first circuit of the IC of method 500B includes circuit218, 218A, 318, 318A, 418 or 418A. In some embodiments, the firsttransistor in the first circuit of the IC of method 500B includestransistor MN3, MNA0, MPA0 or MNA1. In some embodiments, the firstsupply voltage of method 500B is voltage VDD.

In operation 558 of method 500B, at least a second transistor in asecond circuit of the IC is turned on thereby supplying a second voltageto a second feedback transistor (transistor MN0) of the IC. In someembodiments, the second circuit of the IC of method 500B includescircuit 226, 226A, 326, 326A, 426 or 426A. In some embodiments, thesecond transistor in the second circuit of the IC of method 500Bincludes transistor MP3, MPB0, MNB0 or MPB1. In some embodiments, thesecond supply voltage of method 500B is voltage VSS.

FIG. 6 is a flowchart of a method 600 of forming or manufacturing anintegrated circuit in accordance with some embodiments. It is understoodthat additional operations may be performed before, during, and/or afterthe method 600 depicted in FIG. 6 , and that some other operations mayonly be briefly described herein. In some embodiments, the method 600 isusable to form integrated circuits, such as at least IC 100, 200A-200B,300A-300B, and 400A-400B. In some embodiments, the method 600 is usableto form integrated circuits having similar features and similarstructural relationships as one or more of IC 200B, 300B or 400B shownin FIGS. 2B, 3B, and 4B.

In operation 602 of method 600, a layout design of an integrated circuitis generated. Operation 602 is performed by a processing device (e.g.,processor 802 (FIG. 8 )) configured to execute instructions forgenerating a layout design. In some embodiments, the layout design ofmethod 600 includes one or more patterns of a layout design similar toat least integrated circuit 200B, 300B or 400B, or one or more featuressimilar to at least IC 100, 200A, 300A, and 400A. In some embodiments,the layout design of the present application is in a graphic databasesystem (GDSII) file format.

In operation 604 of method 600, the integrated circuit is manufacturedbased on the layout design. In some embodiments, operation 604 of method600 comprises manufacturing at least one mask based on the layoutdesign, and manufacturing the integrated circuit based on the at leastone mask. In some embodiments, operation 604 corresponds to method 500Aof FIG. 5A.

In operation 606 of method 600, a portion, such as removed gate portion246 or 386, is removed thereby forming a first gate 246A and a secondgate 246B. In some embodiments, the removed portion of the gatestructure corresponds to a cut region (e.g., set of cut feature layoutpatterns 246C and 386C (FIGS. 2B-3B)). In some embodiments, theoperation is referred to as a poly-cut (CPO) process.

In some embodiments, the portion of the gate structure that is removedis identified in a layout design as set of cut feature layout patterns.

In some embodiments, removal operation is performed by a removalprocess. In some embodiments, the removal process includes one or moreetching processes suitable to remove a portion of the gate structure. Insome embodiments, the etching process includes identifying a portion ofthe gate structure that is to be removed, and etching the portion of thegate structure that is to be removed. In some embodiments, a mask isused to specify portions of the structure that are to be cut or removed.In some embodiments the mask is a hard mask. In some embodiments, themask is a soft mask. In some embodiments, etching corresponds to plasmaetching, reactive ion etching, chemical etching, dry etching, wetetching, other suitable processes, any combination thereof, or the like.

In some embodiments, operation 604 or 606 of method 600 is useable tomanufacture one or more integrated circuits having one or more of theadvantages described herein, and similar detailed description istherefore omitted. In some embodiments, operation 606 is not performed.

FIG. 7 is a flowchart of a method 700 of generating a layout design ofan integrated circuit, in accordance with some embodiments. It isunderstood that additional operations may be performed before, during,and/or after the method 700 depicted in FIG. 7 , and that some otherprocesses may only be briefly described herein. In some embodiments,method 700 is usable to generate one or more layout designs havinglayout patterns that are similar to corresponding structural features inat least IC 100, 200A-200B, 300A-300B or 400A-400B.

In some embodiments, method 700 is usable to generate one or more layoutpatterns similar to one or more corresponding structural features in atleast IC 100, 200A-200B, 300A-300B or 400A-400B. In some embodiments,method 700 is usable to generate one or more layout patterns havingpattern relationships that are similar to one or more structuralrelationships including at least positions, alignment, lengths orwidths, as well as configurations and layers of at least IC 100,200A-200B, 300A-300B or 400A-400B, and similar detailed description willnot be described in FIG. 7 , for brevity.

In operation 702 of method 700, a set of active region patterns isgenerated or placed on the layout design. In some embodiments, the setof active region patterns of method 700 includes one or more activeregion patterns similar to at least the set of active regions 234, 236,334, 336, 434, 436 or at least active region 238A or 240A, ofnon-limiting examples of FIG. 2B-2D, 3B-3D or 4B-4D.

In operation 704 of method 700, a set of gate patterns is generated orplaced on the layout design. In some embodiments, the set of gatepatterns of method 700 includes one or more gate layout patterns similarto at least gate 246A-246B, 264, 344A-344B, 345A-345B, 386A-386B or446A-446B, of non-limiting examples of FIG. 2B-2D, 3B-3D or 4B-4D.

In operation 706 of method 700, a first set of conductive featurepatterns is generated or placed on the layout design. In someembodiments, the first set of conductive feature patterns of method 700includes one or more conductive feature patterns similar to at leastconductive structures 253, 254, 258, 260 or 278, conductive structures354, 358, 360, 361, 371, 372 or 377-380, or conductive structures478-481, of non-limiting examples of FIG. 2B-2D, 3B-3D or 4B-4D.

In operation 708 of method 700, a first set of via patterns is generatedor placed on the layout design. In some embodiments, the first set ofvia patterns of method 700 includes one or more via patterns similar toat least vias 252, via 274, via 276, vias 352, via 373, via 374, via376, vias 383-385, vias 452, via 484 or via 473, of non-limitingexamples of FIG. 2B-2D, 3B-3D or 4B-4D.

In operation 710 of method 700, a first set of power rail patterns isgenerated or placed on the layout design. In some embodiments, the firstset of power rail patterns of method 700 includes one or more power raillayout patterns similar to at least power rail 242 or 244, ofnon-limiting examples of FIG. 2B-2D, 3B-3D or 4B-4D.

FIG. 8 is a schematic view of a system 800 for designing an IC layoutdesign and manufacturing an IC circuit, in accordance with someembodiments.

In some embodiments, system 800 generates or places one or more IClayout designs described herein. System 800 includes a hardwareprocessor 802 and a non-transitory, computer readable storage medium 804(e.g., memory 804) encoded with, i.e., storing, the computer programcode 806, i.e., a set of executable instructions 806. Computer readablestorage medium 804 is configured for interfacing with manufacturingmachines for producing the integrated circuit. The processor 802 iselectrically coupled to the computer readable storage medium 804 via abus 808. The processor 802 is also electrically coupled to an I/Ointerface 810 by bus 808. A network interface 812 is also electricallyconnected to the processor 802 via bus 808. Network interface 812 isconnected to a network 814, so that processor 802 and computer readablestorage medium 804 are capable of connecting to external elements vianetwork 814. The processor 802 is configured to execute the computerprogram code 806 encoded in the computer readable storage medium 804 inorder to cause system 800 to be usable for performing a portion or allof the operations as described in method 600-700.

In some embodiments, the processor 802 is a central processing unit(CPU), a multi-processor, a distributed processing system, anapplication specific integrated circuit (ASIC), and/or a suitableprocessing unit.

In some embodiments, the computer readable storage medium 804 is anelectronic, magnetic, optical, electromagnetic, infrared, and/or asemiconductor system (or apparatus or device). For example, the computerreadable storage medium 804 includes a semiconductor or solid-statememory, a magnetic tape, a removable computer diskette, a random accessmemory (RAM), a read-only memory (ROM), a rigid magnetic disk, and/or anoptical disk. In some embodiments using optical disks, the computerreadable storage medium 804 includes a compact disk-read only memory(CD-ROM), a compact disk-read/write (CD-R/W), and/or a digital videodisc (DVD).

In some embodiments, the storage medium 804 stores the computer programcode 806 configured to cause system 800 to perform method 600-700. Insome embodiments, the storage medium 804 also stores information neededfor performing method 600-700 as well as information generated duringperforming method 600-700, such as layout design 816, user interface 818and fabrication unit 820, and/or a set of executable instructions toperform the operation of method 600-700. In some embodiments, layoutdesign 816 comprises one or more layout patterns that are similar tofeatures of at least integrated circuit 200B, 300B or 400B.

In some embodiments, the storage medium 804 stores instructions (e.g.,computer program code 806) for interfacing with manufacturing machines.The instructions (e.g., computer program code 806) enable processor 802to generate manufacturing instructions readable by the manufacturingmachines to effectively implement method 600-700 during a manufacturingprocess.

System 800 includes I/O interface 810. I/O interface 810 is coupled toexternal circuitry. In some embodiments, I/O interface 810 includes akeyboard, keypad, mouse, trackball, trackpad, and/or cursor directionkeys for communicating information and commands to processor 802.

System 800 also includes network interface 812 coupled to the processor802. Network interface 812 allows system 800 to communicate with network814, to which one or more other computer systems are connected. Networkinterface 812 includes wireless network interfaces such as BLUETOOTH,WIFI, WIMAX, GPRS, or WCDMA; or wired network interface such asETHERNET, USB, or IEEE-2094. In some embodiments, method 600-700 isimplemented in two or more systems 800, and information such as layoutdesign, and user interface are exchanged between different systems 800by network 814.

System 800 is configured to receive information related to a layoutdesign through I/O interface 810 or network interface 812. Theinformation is transferred to processor 802 by bus 808 to determine alayout design for producing at least integrated circuit 300, 400, 700,800, 1100 or 1200. The layout design is then stored in computer readablemedium 804 as layout design 816. System 800 is configured to receiveinformation related to a user interface through I/O interface 810 ornetwork interface 812. The information is stored in computer readablemedium 804 as user interface 818. System 800 is configured to receiveinformation related to a fabrication unit 820 through I/O interface 810or network interface 812. The information is stored in computer readablemedium 804 as fabrication unit 820. In some embodiments, the fabricationunit 820 includes fabrication information utilized by system 800. Insome embodiments, the fabrication unit 820 corresponds to maskfabrication 934 of FIG. 9 .

In some embodiments, method 600-700 is implemented as a standalonesoftware application for execution by a processor. In some embodiments,method 600-700 is implemented as a software application that is a partof an additional software application. In some embodiments, method600-700 is implemented as a plug-in to a software application. In someembodiments, method 600-700 is implemented as a software applicationthat is a portion of an EDA tool. In some embodiments, method 600-700 isimplemented as a software application that is used by an EDA tool. Insome embodiments, the EDA tool is used to generate a layout of theintegrated circuit device. In some embodiments, the layout is stored ona non-transitory computer readable medium. In some embodiments, thelayout is generated using a tool such as VIRTUOSO® available fromCADENCE DESIGN SYSTEMS, Inc., or another suitable layout generatingtool. In some embodiments, the layout is generated based on a netlistwhich is created based on the schematic design. In some embodiments,method 600-700 is implemented by a manufacturing device to manufacturean integrated circuit using a set of masks manufactured based on one ormore layout designs generated by system 800. In some embodiments, system800 is a manufacturing device configured to manufacture an integratedcircuit using a set of masks manufactured based on one or more layoutdesigns of the present disclosure. In some embodiments, system 800 ofFIG. 8 generates layout designs of an integrated circuit that aresmaller than other approaches. In some embodiments, system 800 of FIG. 8generates layout designs of integrated circuit structure that occupyless area and provide better routing resources than other approaches.

FIG. 9 is a block diagram of an integrated circuit (IC) manufacturingsystem 900, and an IC manufacturing flow associated therewith, inaccordance with at least one embodiment of the present disclosure. Insome embodiments, based on a layout diagram, at least one of (A) one ormore semiconductor masks or (B) at least one component in a layer of asemiconductor integrated circuit is fabricated using manufacturingsystem 900.

In FIG. 9 , IC manufacturing system 900 (hereinafter “system 900”)includes entities, such as a design house 920, a mask house 930, and anIC manufacturer/fabricator (“fab”) 940, that interact with one anotherin the design, development, and manufacturing cycles and/or servicesrelated to manufacturing an IC device 960. The entities in system 900are connected by a communications network. In some embodiments, thecommunications network is a single network. In some embodiments, thecommunications network is a variety of different networks, such as anintranet and the Internet. The communications network includes wiredand/or wireless communication channels. Each entity interacts with oneor more of the other entities and provides services to and/or receivesservices from one or more of the other entities. In some embodiments,one or more of design house 920, mask house 930, and IC fab 940 is ownedby a single larger company. In some embodiments, one or more of designhouse 920, mask house 930, and IC fab 940 coexist in a common facilityand use common resources.

Design house (or design team) 920 generates an IC design layout 922. ICdesign layout 922 includes various geometrical patterns designed for anIC device 960. The geometrical patterns correspond to patterns of metal,oxide, or semiconductor layers that make up the various components of ICdevice 960 to be fabricated. The various layers combine to form variousIC features. For example, a portion of IC design layout 922 includesvarious IC features, such as an active region, gate electrode, sourceelectrode and drain electrode, metal lines or vias of an interlayerinterconnection, and openings for bonding pads, to be formed in asemiconductor substrate (such as a silicon wafer) and various materiallayers disposed on the semiconductor substrate. Design house 920implements a proper design procedure to form IC design layout 922. Thedesign procedure includes one or more of logic design, physical designor place and route. IC design layout 922 is presented in one or moredata files having information of the geometrical patterns. For example,IC design layout 922 can be expressed in a GDSII file format or DFIIfile format.

Mask house 930 includes data preparation 932 and mask fabrication 934.Mask house 930 uses IC design layout 922 to manufacture one or moremasks 945 to be used for fabricating the various layers of IC device 960according to IC design layout 922. Mask house 930 performs mask datapreparation 932, where IC design layout 922 is translated into arepresentative data file (RDF). Mask data preparation 932 provides theRDF to mask fabrication 934. Mask fabrication 934 includes a maskwriter. A mask writer converts the RDF to an image on a substrate, suchas a mask (reticle) 945 or a semiconductor wafer 942. The design layout922 is manipulated by mask data preparation 932 to comply withparticular characteristics of the mask writer and/or requirements of ICfab 940. In FIG. 9 , mask data preparation 932 and mask fabrication 934are illustrated as separate elements. In some embodiments, mask datapreparation 932 and mask fabrication 934 can be collectively referred toas mask data preparation.

In some embodiments, mask data preparation 932 includes opticalproximity correction (OPC) which uses lithography enhancement techniquesto compensate for image errors, such as those that can arise fromdiffraction, interference, other process effects and the like. OPCadjusts IC design layout 922. In some embodiments, mask data preparation932 includes further resolution enhancement techniques (RET), such asoff-axis illumination, sub-resolution assist features, phase-shiftingmasks, other suitable techniques, and the like or combinations thereof.In some embodiments, inverse lithography technology (ILT) is also used,which treats OPC as an inverse imaging problem.

In some embodiments, mask data preparation 932 includes a mask rulechecker (MRC) that checks the IC design layout that has undergoneprocesses in OPC with a set of mask creation rules which contain certaingeometric and/or connectivity restrictions to ensure sufficient margins,to account for variability in semiconductor manufacturing processes, andthe like. In some embodiments, the MRC modifies the IC design layout tocompensate for limitations during mask fabrication 934, which may undopart of the modifications performed by OPC in order to meet maskcreation rules.

In some embodiments, mask data preparation 932 includes lithographyprocess checking (LPC) that simulates processing that will beimplemented by IC fab 940 to fabricate IC device 960. LPC simulates thisprocessing based on IC design layout 922 to create a simulatedmanufactured device, such as IC device 960. The processing parameters inLPC simulation can include parameters associated with various processesof the IC manufacturing cycle, parameters associated with tools used formanufacturing the IC, and/or other aspects of the manufacturing process.LPC takes into account various factors, such as aerial image contrast,depth of focus (DOF), mask error enhancement factor (MEEF), othersuitable factors, and the like or combinations thereof. In someembodiments, after a simulated manufactured device has been created byLPC, if the simulated device is not close enough in shape to satisfydesign rules, OPC and/or MRC are be repeated to further refine IC designlayout 922.

It should be understood that the above description of mask datapreparation 932 has been simplified for the purposes of clarity. In someembodiments, data preparation 932 includes additional features such as alogic operation (LOP) to modify the IC design layout according tomanufacturing rules. Additionally, the processes applied to IC designlayout 922 during data preparation 932 may be executed in a variety ofdifferent orders.

After mask data preparation 932 and during mask fabrication 934, a mask945 or a group of masks 945 are fabricated based on the modified ICdesign layout 922. In some embodiments, mask fabrication 934 includesperforming one or more lithographic exposures based on IC design 922. Insome embodiments, an electron-beam (e-beam) or a mechanism of multiplee-beams is used to form a pattern on a mask (photomask or reticle) 945based on the modified IC design layout 922. The mask 945 can be formedin various technologies. In some embodiments, the mask 945 is formedusing binary technology. In some embodiments, a mask pattern includesopaque regions and transparent regions. A radiation beam, such as anultraviolet (UV) beam, used to expose the image sensitive material layer(e.g., photoresist) which has been coated on a wafer, is blocked by theopaque region and transmits through the transparent regions. In oneexample, a binary version of mask 945 includes a transparent substrate(e.g., fused quartz) and an opaque material (e.g., chromium) coated inthe opaque regions of the binary mask. In another example, the mask 945is formed using a phase shift technology. In the phase shift mask (PSM)version of mask 945, various features in the pattern formed on the maskare configured to have proper phase difference to enhance the resolutionand imaging quality. In various examples, the phase shift mask can beattenuated PSM or alternating PSM. The mask(s) generated by maskfabrication 934 is used in a variety of processes. For example, such amask(s) is used in an ion implantation process to form various dopedregions in the semiconductor wafer, in an etching process to formvarious etching regions in the semiconductor wafer, and/or in othersuitable processes.

IC fab 940 is an IC fabrication entity that includes one or moremanufacturing facilities for the fabrication of a variety of differentIC products. In some embodiments, IC Fab 940 is a semiconductor foundry.For example, there may be a manufacturing facility for the front endfabrication of a plurality of IC products (front-end-of-line (FEOL)fabrication), while a second manufacturing facility may provide the backend fabrication for the interconnection and packaging of the IC products(back-end-of-line (BEOL) fabrication), and a third manufacturingfacility may provide other services for the foundry entity.

IC fab 940 includes wafer fabrication tools 952 (hereinafter fabricationtools 952) configured to execute various manufacturing operations onsemiconductor wafer 942 such that IC device 960 is fabricated inaccordance with the mask(s), e.g., mask 945. In various embodiments,fabrication tools 952 include one or more of a wafer stepper, an ionimplanter, a photoresist coater, a process chamber, e.g., a CVD chamberor LPCVD furnace, a CMP system, a plasma etch system, a wafer cleaningsystem, or other manufacturing equipment capable of performing one ormore suitable manufacturing processes as discussed herein.

IC fab 940 uses mask(s) 945 fabricated by mask house 930 to fabricate ICdevice 960. Thus, IC fab 940 at least indirectly uses IC design layout922 to fabricate IC device 960. In some embodiments, a semiconductorwafer 942 is fabricated by IC fab 940 using mask(s) 945 to form ICdevice 960. In some embodiments, the IC fabrication includes performingone or more lithographic exposures based at least indirectly on ICdesign 922. Semiconductor wafer 942 includes a silicon substrate orother proper substrate having material layers formed thereon.Semiconductor wafer 942 further includes one or more of various dopedregions, dielectric features, multilevel interconnects, and the like(formed at subsequent manufacturing steps).

System 900 is shown as having design house 920, mask house 930 or IC fab940 as separate components or entities. However, it is understood thatone or more of design house 920, mask house 930 or IC fab 940 are partof the same component or entity.

Details regarding an integrated circuit (IC) manufacturing system (e.g.,system 900 of FIG. 9 ), and an IC manufacturing flow associatedtherewith are found, e.g., in U.S. Pat. No. 9,256,709, granted Feb. 9,2016, U.S. Pre-Grant Publication No. 20150278429, published Oct. 1,2015, U.S. Pre-Grant Publication No. 20100040838, published Feb. 6,2014, and U.S. Pat. No. 7,260,442, granted Aug. 21, 2007, the entiretiesof each of which are hereby incorporated by reference.

One aspect of this description relates to an integrated circuit. In someembodiments, an integrated circuit includes a Schmitt trigger circuit.In some embodiments, the Schmitt trigger circuit includes a first andsecond set of transistors, a first and second feedback transistor, and afirst and second circuit. In some embodiments, the first set oftransistors is connected between a first voltage supply and an outputnode. The first voltage supply having a first voltage. In someembodiments, the second set of transistors is connected between theoutput node and a second voltage supply different from the first voltagesupply. In some embodiments, the second voltage supply has a secondvoltage different from the first voltage. In some embodiments, the firstfeedback transistor is connected to the output node, a first nodebetween the first set of transistors, and a second node. In someembodiments, the first circuit is electrically connected to the secondnode, the first voltage supply and the second voltage supply, and isconfigured to supply the second supply voltage to the second node. Insome embodiments, the second feedback transistor is connected to theoutput node, a third node between the second set of transistors, and afourth node. In some embodiments, the second circuit is electricallyconnected to the fourth node, the first voltage supply and the secondvoltage supply, and configured to supply the first supply voltage to thefourth node.

Another aspect of this description relates to an integrated circuit. Insome embodiments, the integrated circuit includes a first well, a firstset of transistors, a second set of transistors, a first circuit, asecond circuit, a first power rail, and a second power rail. In someembodiments, the first well extends in a first direction, is in asubstrate, and has a first dopant type. In some embodiments, the firstset of transistors includes a first set of active regions extending inthe first direction, being on a first level, and in the first well. Insome embodiments, the second set of transistors includes a second set ofactive regions outside of the first well, extending in the firstdirection, being on the first level, and being separated from the firstset of active regions in a second direction different from the firstdirection. In some embodiments, the first circuit has a first activeregion in the first well, and the first circuit is configured to supplya first voltage to at least one transistor in the second set oftransistors. In some embodiments, the second circuit has a second activeregion next to the second set of active regions, and the second circuitis configured to supply a second voltage to at least one transistor inthe first set of transistors. In some embodiments, the first power railis configured to supply the first voltage to at least the first circuit.In some embodiments, the first power rail is electrically connected toat least the first circuit, and is on a second level different from thefirst level. In some embodiments, the second power rail is configured tosupply the second voltage to at least the second circuit. In someembodiments, the second power rail is electrically connected to at leastthe second circuit, and being on the second level.

Still another aspect of this description relates to a method offabricating an integrated circuit. In some embodiments, the methodincludes forming a first set of transistors on a substrate, the firstset of transistors including a first set of active regions in a firstwell in the substrate. In some embodiments, the method further includesforming a second set of transistors, the second set of transistorsincluding a second set of active regions in the substrate. In someembodiments, the method further includes forming a first circuit, thefirst circuit including a third set of active regions within the firstwell, the first circuit being configured to supply a first voltage to atleast one transistor in the second set of transistors. In someembodiments, the method further includes forming a second circuit, thesecond circuit including a fourth set of active regions in thesubstrate, the second circuit configured to supply a second voltage toat least one transistor in the first set of transistors. In someembodiments, the method further includes depositing a first conductivematerial on a first level over at least the first circuit or secondcircuit thereby forming a first power rail, the first power rail beingconfigured to supply the first voltage to at least the first circuit. Insome embodiments, the method further includes depositing a secondconductive material on the first level thereby forming a second powerrail, the second power rail being configured to supply the secondvoltage to at least the second circuit.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1-8. (canceled)
 9. An integrated circuit, comprising: a first wellextending in a first direction, being in a substrate, and having a firstdopant type; a first set of transistors including a first set of activeregions extending in the first direction, being on a first level, and inthe first well; a second set of transistors including a second set ofactive regions outside of the first well, extending in the firstdirection, being on the first level, and being separated from the firstset of active regions in a second direction different from the firstdirection; a first circuit having a first active region in the firstwell, the first circuit configured to supply a first voltage to at leastone transistor in the second set of transistors; a second circuit havinga second active region next to the second set of active regions, thesecond circuit configured to supply a second voltage to at least onetransistor in the first set of transistors; a first power railconfigured to supply the first voltage to at least the first circuit,the first power rail electrically connected to at least the firstcircuit, and being on a second level different from the first level; anda second power rail configured to supply the second voltage to at leastthe second circuit, the second power rail electrically connected to atleast the second circuit, and being on the second level.
 10. Theintegrated circuit of claim 9, wherein the at least one transistor inthe first set of transistors comprises: a first feedback transistorincluding a first gate extending in the second direction, and being on athird level different from the first level and the second level, a firstsource/drain (S/D) region corresponding to a first portion of a firstactive region of the first set of active regions, and a second S/Dregion corresponding to a second portion of the first active region ofthe first set of active regions; and the at least one transistor in thesecond set of transistors comprises: a second feedback transistorincluding a second gate extending in the second direction, and being onthe third level, a first S/D region corresponding to a first portion ofa first active region of the second set of active regions, and a secondS/D region corresponding to a second portion of the first active regionof the second set of active regions, wherein the first gate and thesecond gate are part of a same gate structure.
 11. The integratedcircuit of claim 10, wherein the first circuit comprises: a first PMOStransistor including a third gate extending in the second direction, andbeing on the third level, a first source/drain (S/D) regioncorresponding to a first portion of the first active region, and asecond S/D region corresponding to a second portion of the first activeregion; and the second circuit comprises: a first NMOS transistorincluding a fourth gate, a first S/D region and a second S/D region, thefourth gate extending in the second direction, being on the third level,and being separated from the third gate in the second direction, thefirst S/D region corresponding to a first portion of the second activeregion, and the second S/D region corresponding to a second portion ofthe second active region.
 12. The integrated circuit of claim 11,wherein the integrated circuit further comprises: a first conductivestructure on the second level, extending in at least the first directionor the second direction, and electrically connected to the second powerrail; one or more first vias electrically connecting the firstconductive structure and the third gate together; and one or more secondvias electrically connecting the first conductive structure and thefirst S/D region of the first NMOS transistor together.
 13. Theintegrated circuit of claim 12, wherein the integrated circuit furthercomprises: a second conductive structure on the second level, andextending in at least the first direction or the second direction, andelectrically connected to the first power rail; one or more third viaselectrically connecting the second conductive structure and the fourthgate together; and one or more fourth vias electrically connecting thesecond conductive structure and the first S/D region of the first PMOStransistor together.
 14. The integrated circuit of claim 13, wherein theintegrated circuit further comprises: a third conductive structure onthe second level, extending in at least the first direction or thesecond direction; one or more fifth vias electrically connecting thethird conductive structure and the second S/D region of the first PMOStransistor together; and one or more sixth vias electrically connectingthe third conductive structure and the first portion of the first activeregion of the second set of active regions together.
 15. The integratedcircuit of claim 14, wherein the integrated circuit further comprises: afourth conductive structure on the second level, extending in at leastthe first direction or the second direction; one or more seventh viaselectrically connecting the fourth conductive structure and the secondS/D region of the first NMOS transistor together; and one or more eighthvias electrically connecting the fourth conductive structure and thefirst portion of the first active region of the first set of activeregions together.
 16. The integrated circuit of claim 11, wherein thesecond circuit further comprises: a third active region in the firstwell, the third active region being next to the first active region; anda second PMOS transistor including a fifth gate extending in the seconddirection, and being on the third level, a first source/drain (S/D)region corresponding to a first portion of the third active region, anda second S/D region corresponding to a second portion of the thirdactive region; and the first circuit further comprises: a fourth activeregion next to the second active region; and a second NMOS transistorincluding a sixth gate, a first S/D region and a second S/D region, thesixth gate extending in the second direction, being on the third level,and being separated from the fifth gate in the second direction, thefirst S/D region corresponding to a first portion of the fourth activeregion, and the second S/D region corresponding to a second portion ofthe fourth active region.
 17. The integrated circuit of claim 16,wherein the integrated circuit further comprises: a first conductivestructure on the second level, extending in at least the first directionor the second direction, and electrically connected to the second powerrail; one or more first vias electrically connecting the firstconductive structure and the first S/D region of the second NMOStransistor together; a second conductive structure on the second level,and extending in at least the first direction or the second direction,and electrically connected to the first power rail; one or more secondvias electrically connecting the second conductive structure and thefirst S/D region of the second PMOS transistor together; a thirdconductive structure on the second level, and extending in at least thefirst direction or the second direction; one or more third viaselectrically connecting the third conductive structure and the thirdgate together; one or more fourth vias electrically connecting the thirdconductive structure and the second S/D region of the second NMOStransistor together; a fourth conductive structure on the second level,and extending in at least the first direction or the second direction;one or more fifth vias electrically connecting the fourth conductivestructure and the fourth gate together; and one or more sixth viaselectrically connecting the fourth conductive structure and the secondS/D region of the second PMOS transistor together.
 18. The integratedcircuit of claim 17, wherein the integrated circuit further comprises: afifth conductive structure on the second level, and extending in atleast the first direction or the second direction; one or more seventhvias electrically connecting the fifth conductive structure and thesecond S/D region of the first PMOS transistor together; one or moreeighth vias electrically connecting the fifth conductive structure andthe first portion of the first active region of the second set of activeregions together. a sixth conductive structure on the second level, andextending in at least the first direction or the second direction; oneor more ninth vias electrically connecting the sixth conductivestructure and the second S/D region of the first NMOS transistortogether; one or more tenth vias electrically connecting the sixthconductive structure and the first portion of the first active region ofthe first set of active regions together; a seventh conductive structureon the second level, and extending in at least the first direction orthe second direction; an eighth conductive structure on the secondlevel, and extending in at least the first direction or the seconddirection; one or more eleventh vias electrically connecting the seventhconductive structure and the first S/D region of the first PMOStransistor together, the seventh conductive structure being coupled tothe first power rail; and one or more twelfth vias electricallyconnecting the eighth conductive structure and the first S/D region ofthe first NMOS transistor together, the eighth conductive structurebeing coupled to the second power rail. 19-20. (canceled)
 21. Anintegrated circuit, comprising: a first well extending in a firstdirection, being in a substrate, and having a first dopant type; a firstset of transistors including a first set of active regions extending ina first direction, being on a first level, and in the first well; asecond set of transistors including a second set of active regionsoutside of the first well, extending in the first direction, being onthe first level, and being separated from the first set of activeregions in a second direction different from the first direction; afirst circuit having a first active region in the first well, andconfigured to supply a first voltage to a first transistor in the secondset of transistors, the first transistor in the first set of transistorscomprises: a first feedback transistor including a first gate extendingin the second direction, a first source/drain (S/D) region of the firstfeedback transistor corresponding to a first portion of a first activeregion of the first set of active regions, and a second S/D region ofthe first feedback transistor corresponding to a second portion of thefirst active region of the first set of active regions; a second circuithaving a second active region next to the second set of active regions,and configured to supply a second voltage to a first transistor in thefirst set of transistors; a first power rail extending in the firstdirection, being configured to supply the first voltage to at least thefirst circuit, the first power rail electrically connected to at leastthe first circuit, and being on a second level different from the firstlevel; and a second power rail extending in the first direction, beingseparated from the first power rail in the second direction, beingconfigured to supply the second voltage to at least the second circuit,the second power rail electrically connected to at least the secondcircuit, and being on the second level, wherein the first gate is on athird level different from the first level and the second level.
 22. Theintegrated circuit of claim 21, wherein the first transistor in thesecond set of transistors comprises: a second feedback transistorincluding a second gate extending in the second direction, and being onthe third level, a first S/D region of the second feedback transistorcorresponding to a first portion of a first active region of the secondset of active regions, and a second S/D region of the second feedbacktransistor corresponding to a second portion of the first active regionof the second set of active regions, wherein the first gate and thesecond gate are part of a same gate structure.
 23. The integratedcircuit of claim 22, wherein the first circuit comprises: a first PMOStransistor including a first active region, a third gate extending inthe second direction, and being on the third level, the firstsource/drain (S/D) region of the first PMOS transistor corresponding toa first portion of the first active region, and the second S/D region ofthe first PMOS transistor corresponding to a second portion of the firstactive region; and the second circuit comprises: a first NMOS transistorincluding a second active region, a fourth gate extending in the seconddirection, being on the third level, and being separated from the thirdgate in the second direction, a first S/D region of the first NMOStransistor corresponding to a first portion of the second active region,and a second S/D region of the first NMOS transistor corresponding to asecond portion of the second active region.
 24. The integrated circuitof claim 23, wherein the integrated circuit further comprises: a firstconductor on the second level, extending in at least the first directionor the second direction, overlapping the third gate or the fourth gate,and electrically connected to the second power rail; a first viaelectrically connecting the first conductor and the third gate together;and a second via electrically connecting the first conductor and thefirst S/D region of the first NMOS transistor together.
 25. Theintegrated circuit of claim 24, wherein the integrated circuit furthercomprises: a second conductor on the second level, and extending in atleast the first direction or the second direction, overlapping the thirdgate or the fourth gate, and electrically connected to the first powerrail; a third via electrically connecting the second conductor and thefourth gate together; and a fourth via electrically connecting thesecond conductor and the first S/D region of the first PMOS transistortogether.
 26. The integrated circuit of claim 25, wherein the integratedcircuit further comprises: a third conductor on the second level,extending in at least the first direction or the second direction; afifth via electrically connecting the third conductor and the second S/Dregion of the first PMOS transistor together; and a sixth viaelectrically connecting the third conductor and the first portion of thefirst active region of the second set of active regions together. 27.The integrated circuit of claim 26, wherein the integrated circuitfurther comprises: a fourth conductor on the second level, extending inat least the first direction or the second direction and overlapping thesecond gate; a seventh via electrically connecting the fourth conductorand the second S/D region of the first NMOS transistor together; and aneighth via electrically connecting the fourth conductor and the firstportion of the first active region of the first set of active regionstogether.
 28. The integrated circuit of claim 23, wherein the secondcircuit further comprises: a third active region in the first well, thethird active region being next to the first active region; and a secondPMOS transistor including a fifth gate extending in the seconddirection, and being on the third level, a first source/drain (S/D)region of the second PMOS transistor corresponding to a first portion ofthe third active region, and a second S/D region of the second PMOStransistor corresponding to a second portion of the third active region;and the first circuit further comprises: a fourth active region next tothe second active region; and a second NMOS transistor including a sixthgate extending in the second direction, being on the third level, andbeing separated from the fifth gate in the second direction, a first S/Dregion of the second NMOS transistor corresponding to a first portion ofthe fourth active region, and a second S/D region of the second NMOStransistor corresponding to a second portion of the fourth activeregion.
 29. An integrated circuit, comprising: a first well extending ina first direction, being in a substrate, and having a first dopant type;a first set of transistors including a first transistor of a first type,and a first set of active regions extending in a first direction, andbeing on a first level, and in the first well; a second set oftransistors including a second transistor of a second type, and a secondset of active regions outside of the first well, extending in the firstdirection, being on the first level, and being separated from the firstset of active regions in a second direction different from the firstdirection; a first circuit having a first active region in the firstwell, the first circuit includes: a third transistor of the first type,and being configured to supply a first voltage to the second transistor;a second circuit having a second active region next to the second set ofactive regions, the second circuit includes: a fourth transistor of thesecond type, the fourth transistor configured to supply a second voltageto the first transistor; a first power rail extending in the firstdirection, being configured to supply the first voltage to at least thethird transistor, the first power rail being electrically connected toat least the third transistor, and being on a second level differentfrom the first level; and a second power rail extending in the firstdirection, being separated from the first power rail in the seconddirection, being configured to supply the second voltage to at least thefourth transistor, the second power rail being electrically connected toat least the fourth transistor, and being on the second level; and afirst gate structure extending in the second direction, overlapping thefirst well, being between the first set of active regions and the firstactive region, and being on a third level different from the first leveland the second level.
 30. The integrated circuit of claim 29, whereinthe third transistor includes a first gate coupled to the second powerrail, and the fourth transistor includes a second gate coupled to thefirst power rail.